Toward quantum state manipulation in twin InSb/GaAs quantum dots

Kiravittaya, Suwit; Thainoi, Supachok; Zon,; Ratanathammaphan, Somchai; Kanjanachuchai, Songphol; Panyakeow, Somsak

doi:10.1109/ieecon.2017.8075731

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2018

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“…opening the possibility of their use in charge based memory devices [9]. The delta-like zero-dimensional density of states distribution in QDs also has advantages for photonic devices by reducing spectral line width and increasing radiative recombination rates.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy

Hodgson

Bentley

Delli

et al. 2018

Semicond. Sci. Technol.

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We present the results of an investigation into the growth of InGaSb/GaAs quantum dots (QDs) by molecular beam epitaxy using migration-enhanced epitaxy. Surface atomic force microscopy and cross-sectional transmission electron microscopy show that the QDs undergo a significant change in morphology upon capping with GaAs. A GaAs 'cold capping' technique was partly successful in preserving QD morphology during this process, but strong group-V intermixing was still observed. Energy-dispersive x-ray spectroscopy reveals that the resulting nanostructures are small 'core' QDs surrounded by a highly intermixed disc. Temperature varying photoluminescence (PL) measurements indicate strong light emission from the QDs, with an emission wavelength of 1230 nm at room temperature. Nextnano 8×8 k.p calculations show good agreement with the PL results and indicate a low level of group-V intermixing in the core QD.

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Section: Introductionmentioning

confidence: 99%