2008
DOI: 10.1021/cm802343u
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Toward the Design of a Sequential Two Photon Photoacid Generator for Double Exposure Photolithography

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Cited by 28 publications
(21 citation statements)
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“…PAG materials were synthesized as previously reported. 7 Butyl and hexyl azobenzene dopants ( Figure 2) were synthesized according the method of Rondeau et al 8 Acetone was dried over molecular sieves and distilled before use. The mesogen for hydrosilylation was synthesized as shown in …”
Section: Methodsmentioning
confidence: 99%
“…PAG materials were synthesized as previously reported. 7 Butyl and hexyl azobenzene dopants ( Figure 2) were synthesized according the method of Rondeau et al 8 Acetone was dried over molecular sieves and distilled before use. The mesogen for hydrosilylation was synthesized as shown in …”
Section: Methodsmentioning
confidence: 99%
“…Conventional photo-resist materials are not available in DET because sub-threshold exposure in the first exposure reduces the dose required to make the photo-resist soluble in the second exposure [9,10]. Material integration of DET is difficult compared to SADP and cross DPT because required characteristics of photo-resist materials for DET are complex compared to those of SADP and cross DPT [9,10]. Materials are available and material integrations are not difficult in SADP and cross DPT because conventional photo-resist materials are used in SADP and cross DPT.…”
Section: Process Integration Of Memory Cell Capacitor With Cross Doubmentioning
confidence: 99%
“…The simplest form of triple patterning is triple exposure (Figure 2a) which requires a nonlinear photoresist. Possible candidates include contrast enhancement layer (CEL) 1 and two-photon absorption materials 2 . Figure 2b shows the logic extension of the litho-etch-litho-etch (LELE) 3 to litho-etch-litho-etchlitho-etch (LELELE).…”
Section: Higher Order Pitch Division Lithographymentioning
confidence: 99%