Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU

Nanoscale optical critical dimension measurement of a contact hole using deep ultraviolet spectroscopic ellipsometry

“…8), the parameters were found to be SiO 2 Figure 9 shows the contact hole TCD/BCD regression results of 36 sites (9 sites per target) (a) with and (b) without DUVSE. 8), the parameters were found to be SiO 2 Figure 9 shows the contact hole TCD/BCD regression results of 36 sites (9 sites per target) (a) with and (b) without DUVSE.…”