Towards a 100 000 TES Focal Plane Array: A Robust, High-Density, Superconducting Cable Interface

Pappas, Christine G.

doi:10.1109/tasc.2014.2379092

Cited by 6 publications

(2 citation statements)

References 13 publications

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“…Freestanding polyimide substrates are cut to size from a roll of industry‐grade 50‐µm‐thick DuPont Kapton‐E, cleaned in the same manner as glass substrates, and outgassed for 8 h under vacuum at 200 °C before metallization. To prepare spin‐coated polyimide substrates, a single layer of HD Microsystems PI2611 is spin‐coated onto a silicon carrier wafer with native oxide (as in Pappas and Li and Jackson), cured for 3 h in an N 2 environment at 350 °C, and lastly outgassed for 2 h under vacuum at 200 °C before metallization. Its final thickness (set by the spin speed of 4000 rpm) is approximately 3.5 µm.…”

Section: Zno Tfts On Plastic Substratesmentioning

confidence: 99%

Impact of bending on flexible metal oxide TFTs and oscillator circuits

et al. 2016

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Thin‐film circuits on plastic capable of high‐frequency signal generation have important applications in large‐area, flexible hybrid systems, enabling efficient wireless transmission of power and information. We explore oscillator circuits using zinc‐oxide thin‐film transistors (ZnO TFTs) deposited by the conformal, layer‐by‐layer growth technique of plasma‐enhanced atomic layer deposition. TFTs on three substrates—glass, 50‐µm‐thick freestanding polyimide, and 3.5‐µm‐thick spin‐cast polyimide—are evaluated to identify the best candidate for high‐frequency flexible oscillators. We find that TFTs on ultrathin plastic can endure bending to smaller radii than TFTs on commercial 50‐µm‐thick freestanding polyimide, and their superior dimensional stability furthermore allows for smaller gate resistances and device capacitances. Oscillators on ultrathin plastic with minimized parasitics achieve oscillation frequencies as high as 17 MHz, well above the cutoff frequency fT. Lastly, we observe a bending radius dependence of oscillation frequency for flexible TFT oscillators and examine how mitigating device parasitics benefits the oscillator frequency versus power consumption tradeoff.

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Section: Zno Tfts On Plastic Substratesmentioning

confidence: 99%

Impact of bending on flexible metal oxide TFTs and oscillator circuits

et al. 2016

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“…o C, TFT fabrication on polyimide is possible with very few alterations compared to processing on glass. To prepare 3.5-μm-thick polyimide foil substrates, a single layer of HD Microsystems PI2611 is spin-coated onto a silicon carrier wafer (as in [8,9]), cured in a nitrogen environment, and lastly outgassed in a vacuum oven prior to TFT fabrication. Fabrication proceeds directly on the fresh polyimide surface.…”

Section: Zno/al2o3 Fabricated At Plastic-compatible Temperaturesmentioning

confidence: 99%

18-2: Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems

Afsar

Tang

Rieutort‐Louis

et al. 2016

SID Symposium Digest of Technical Papers

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High-frequency signals have important applications in large-area hybrid systems, enabling efficient wireless transmission of power and information. We report zinc-oxide thin-film transistor (ZnO TFT) cross-coupled LC oscillator circuits on glass and 3.5-μm-thick polyimide substrates that achieve oscillation frequencies as high as 35 MHz and 17 MHz, respectively. The TFTs are designed for high unity power-gain frequency f MAX by minimizing gate resistance and device capacitances. In a resonant oscillator topology, this enables oscillation well above the cutoff frequency f T of the TFTs. Oscillators on plastic benefit from the improved dimensional stability of spin-cast ultrathin substrates, which allows TFTs on these substrates to have gate resistances and device capacitances comparable to TFTs on glass. Author KeywordsOxide thin-film transistor (TFT); zinc oxide; plasma-enhanced atomic layer deposition (PEALD); cutoff frequency (f T ); unity power gain frequency (f MAX ); TFT circuits; thin-film/CMOS hybrid systems; flexible electronics; large area electronics (LAE). Objective and BackgroundLarge-area electronics (LAE) offers unprecedented capabilities as a technology for sensing. This is because its characteristic lowtemperature processing enables compatibility with a variety of flexible substrates and materials for forming diverse transducers. While a broad set of sensors have been demonstrated [1][2][3][4], creating full sensing systems with exclusively low-temperature compatible components remains challenging. Full LAE sensing systems can be achieved effectively with a hybrid approach in which silicon-CMOS ICs are coupled with LAE components (TFT circuits, large-area passive inductors and capacitors, thinfilm solar cells, sensors) [5]. In these systems, we avoid complex challenges of monolithic system integration by fabricating different large-area components on separate polyimide sheets and laminating them together into a single flexible unit. Lamination is made possible by the use of non-contact interfaces for wireless data and power transfer between the sheets, as in Figure 1. Generation of high-frequency signals (> 10 MHz) enables improved performance and/or power efficiency in inductive noncontact LAE interfaces [6]. For thin-film transistors (TFTs) processed at plastic-compatible temperatures, limited TFT performance makes circuit operation above 10 MHz a significant challenge. We report key advances in this direction: TFT oscillators fabricated at a maximum temperature of 200ºC on glass and 3.5-μm-thick polyimide substrates, operating at oscillation frequency f OSC = 35 MHz with a 7 V supply voltage (glass) and f OSC = 17 MHz with a 9 V supply voltage (plastic).To achieve these results, we: 1.Use zinc oxide semiconductor with a mobility of ~10 cm 2 /Vs for the active TFT material, because metal-oxide semiconductors offer higher mobility than α-Si at temperatures ≤ 200 o C. 2.Employ a resonant circuit topology and high quality, low-R inductors enabled by large area to build circuits operating ab...

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