Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy

Persichetti, Luca; Capasso, Andrea; Sgarlata, A.; Fanfoni, M.; Motta, Nunzio; Balzarotti, A.

doi:10.1007/978-1-4614-0742-3_4

Cited by 2 publications

(3 citation statements)

References 194 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The islands chemical potential, µ, figure 12(b), is obtained by differentiating equation ( 6) with respect to the number of atoms proportional to V . From this analysis, we learn that the shape transition to domes, occurring Adapted from [108].…”

Section: Thermodynamic Stability Of Epitaxial Nanostructuresmentioning

confidence: 99%

See 1 more Smart Citation

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Persichetti

Sgarlata

Fanfoni

et al. 2015

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Starting with the basic definition, a short description of a few relevant physical quantities playing a role in the growth process of heteroepitaxial strained systems, is provided. As such, the paper is not meant to be a comprehensive survey but to present a connection between the Stranski-Krastanov mechanism of nanostructure formation and the basic principles of nucleation and growth. The elastic field is described in the context of continuum elasticity theory, using either analytical models or numerical simulations. The results are compared with selected experimental results obtained on GeSi nanostructures. In particular, by tuning the value of quantities such as vicinality, substrate orientation and symmetry of the diffusion field, we elucidate how anisotropic elastic interactions determine shape, size, lateral distribution and composition of quantum dots.

show abstract

Section: Thermodynamic Stability Of Epitaxial Nanostructuresmentioning

confidence: 99%

“…Formation energy of a {1 0 5} Ge pyramid calculated assuming a strain-independent surface energy γ = σ = 65 meV Å −2 (continuous line) in comparison to the curve obtained after taking into account the dependence of γ {105} on strain (dashed line). Adapted from[108].…”

mentioning

confidence: 99%

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Persichetti

Sgarlata

Fanfoni

et al. 2015

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…The most peculiar feature of this system is the exceptional stability of the rebonded-step (RS)-reconstructed {1 0 5} facets of Ge and SiGe pyramidal islands and huts [17][18][19]. This face orientation, which does not exist on the strain-free equilibrium shape of Si and Ge surfaces [20][21][22], dictates the entire evolutionary pathway observed for Ge/Si(0 0 1) epitaxy [6,[23][24][25]. In the last decade, extensive experimental and theoretical work has focused on understanding the structural properties of the RS reconstruction [18,19]-one of the largest single-reconstruction motifs observed-and its energetics under compressive misfit strain [26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study

Sheverdyaeva¹,

Hogan²,

Sgarlata³

et al. 2018

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

We present a joint experimental and theoretical study of the electronic properties of the rebonded-step reconstructed Ge/Si(1 0 5) surface which is the main strained face found on Ge/Si(0 0 1) quantum dots and is considered a prototypical model system for surface strain relaxation in heteroepitaxial growth. Using a vicinal surface as a model system for obtaining a stable single-domain film structure with large terraces and rebonded-step surface termination, we realized an extended and ordered Ge/Si planar hetero-junction suitable for direct study with angle-resolved photoemission spectroscopy. At the coverage of four Ge monolayers photoemission spectroscopy reveals the presence of 2D surface and film bands displaying energy-momentum dispersion compatible with the 5 × 4 periodicity of the system. The good agreement between experiment and first-principles electronic structure calculations confirms the validity of the rebonded-step structural model. The direct observation of surface features within 1 eV below the valence band maximum corroborates previously reported analysis of the electronic and optical behavior of the Ge/Si hetero-interface.

show abstract

Towards a Controlled Growth of Self-assembled Nanostructures: Shaping, Ordering, and Localization in Ge/Si Heteroepitaxy

Cited by 2 publications

References 194 publications

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Heteroepitaxy of Ge on singular and vicinal Si surfaces: elastic field symmetry and nanostructure growth

Electronic structure of the Ge/Si(1 0 5) hetero-interface: an ARPES and DFT study

Contact Info

Product

Resources

About