2010
DOI: 10.1038/nnano.2009.474
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Towards a quantum resistance standard based on epitaxial graphene

Abstract: The quantum Hall effect allows the international standard for resistance to be defined in terms of the electron charge and Planck's constant alone. The effect comprises the quantization of the Hall resistance in two-dimensional electron systems in rational fractions of R(K) = h/e(2) = 25,812.807557(18) Omega, the resistance quantum. Despite 30 years of research into the quantum Hall effect, the level of precision necessary for metrology--a few parts per billion--has been achieved only in silicon and iii-v hete… Show more

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Cited by 434 publications
(447 citation statements)
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“…The graphene on 6H-SiC and 4H-SiC has shown prospective results in quantum Hall resistance [20]. Recently a comparison of graphene on the SiC polytypes 3C-SiC, 6H-SiC and 4H-SiC was presented [21].…”
Section: Resultsmentioning
confidence: 99%
“…The graphene on 6H-SiC and 4H-SiC has shown prospective results in quantum Hall resistance [20]. Recently a comparison of graphene on the SiC polytypes 3C-SiC, 6H-SiC and 4H-SiC was presented [21].…”
Section: Resultsmentioning
confidence: 99%
“…But we can be sure that we do not have such a DOS in our system because similar material to that used in our studies shows the typical quantum Hall effect (QHE) of eSLG. 9,25 Since we do not find any explanation for the difference between D C and D S in the way D C is determined, let us have a look at D S . D S is obtained by the fit of the Hanle precession data in the same way as in earlier experiments.…”
mentioning
confidence: 95%
“…Although such preparation of large-area graphene film using metallic catalysts has been widely adopted for various nanoelectronic device research studies, it is more appealing to optoelectronics to achieve direct synthesize of graphene on the substrates without a catalyst since it can avoid contamination from metal, metal etchant, and Polymeric Methyl Methacrylate (PMMA). New types of substrate, for instance, Ge [42] (Figure 2b) and SiC [43] (Figure 2c), have been tested for the non-catalytic growth of single crystalline graphene. SiC substrate has been demonstrated with a high mobility of 500-2000 cm 2 V −1 s −1 with a Si-terminated surface [43].…”
Section: Graphenementioning
confidence: 99%
“…New types of substrate, for instance, Ge [42] (Figure 2b) and SiC [43] (Figure 2c), have been tested for the non-catalytic growth of single crystalline graphene. SiC substrate has been demonstrated with a high mobility of 500-2000 cm 2 V −1 s −1 with a Si-terminated surface [43]. Despite the substrate types, advanced growth mechanism such as the plasma-enhanced CVD (PECVD) has also been proved to be useful in obtaining graphene at low temperature without metallic catalysts.…”
Section: Graphenementioning
confidence: 99%