Towards Electrochemical Fabrication of Free-Standing Indium Phosphide Nanofilms

Quill, Nathan; O’Dwyer, Colm; Buckley, D. H.; Lynch, Robert P.

doi:10.1149/06914.0033ecst

Cited by 5 publications

(5 citation statements)

References 39 publications

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“…parallel to the secondary flat of the InP wafer). 1,2,4,57,58 This shows that individual, isolated porous domains form in the early stages of anodization. We have shown that each such domain is separated from the surface by a thin non-porous layer of dense InP [1][2][3][4] and is connected to the electrolyte by a single pit which penetrates this nearsurface layer.…”

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confidence: 89%

Anodic Formation of Nanoporous Indium Phosphide in KOH Electrolytes: Effects of Temperature and Concentration

Quill

Buckley

O’Dwyer

et al. 2019

J. Electrochem. Soc.

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Anodization of n-InP electrodes was carried out over a range of temperatures and KOH concentrations. Scanning electron microscopy showed <111>A aligned pore growth with pore width decreasing as the temperature was increased. This variation is explained in terms of the relative rates of electrochemical reaction and hole diffusion and supports the three-step model proposed earlier. As temperature is increased, both the areal density and width of surface pits decrease resulting in a large increase in the current density through the pits. This explains an observed decrease in porous layer thickness: pits sustain mass transport at the necessary rate for a shorter time before precipitation of etch products blocks the pores. As the concentration of KOH is increased, both pore width and layer thickness decrease to minima at ∼9 mol dm −3 after which they again increase. This variation of pore width is also explained by the three-step model and the variation in layer thickness is explained by mass transport effects. Layer porosity follows a similar trend to pore width, further supporting the three-step model. A transition from porous layer formation to planar etching is observed below 2 mol dm −3 KOH, and this is also explained by the three-step model.

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confidence: 89%

Anodic Formation of Nanoporous Indium Phosphide in KOH Electrolytes: Effects of Temperature and Concentration

Quill

Buckley

O’Dwyer

et al. 2019

J. Electrochem. Soc.

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“…Figure 10 shows a series of LSVs of InP in KOH solutions varying from 2.0 to 1.0 mol dm -3 . The LPSs were stopped at an upper potential of 0.75 V because previous studies 41,42 have shown that the etching mechanism changes at higher potentials, resulting in the undercutting and removal of the porous layer. The shape of the LSV at 2.0 mol dm -3 KOH is similar to that seen for porous layer formation at lower temperatures in Fig.…”

Section: The Transition From Porous Layer Formation To Planar Etchingmentioning

confidence: 99%

Etching Mechanisms in III-V Semiconductors: Electrochemical Etching of Indium Phosphide

et al. 2019

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Anodization of n-InP electrodes was carried out over a range of temperatures and KOH concentrations. Scanning electron microscopy showed <111>A aligned pore growth, with decreasing pore width as the temperature was increased. This variation in pore width is explained in terms of the relative rates of electrochemical reaction and hole diffusion and supports the three-step model proposed earlier. As temperature was increased, both the areal density and width of surface pits decreased, resulting in a large increase in the current density through the pits. This explains a corresponding observed decrease in porous layer thickness: smaller pits sustain mass transport for a shorter time before precipitation of etch products blocks the pores. In galvanostatic experiments, radius of curvature at pore tips increased with current density but pore width decreased. As KOH concentration was increased, both pore width and layer thickness decreased to minima at ~9 mol dm-3 after which they again increased. A transition from porous layer formation to planar etching was observed below 2 mol dm-3 KOH. All of these trends are explained by the three-step model and mass transport effects in surface pits.

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“…If a sample which has been anodised for a short period of time (i.e., to between Ei and Ep1 of Fig. 5) is then chemically etched in a H2SO4 solution, all the porous structures including the internal skeletons of the domains can be removed [22] as shown in Fig. 6.…”

Section: Pit Initiation and Domain Expansion (Region Iia) Progressive...mentioning

confidence: 99%

Process of Formation of Porous Layers in n-InP

et al. 2017

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This paper describes variations in current density observed in linear sweep voltammetry curves during the anodization of n-InP in aqueous KOH electrolyte and how these variations arise. The analysis is performed by stopping the anodization after different durations of etching and observing via scanning electron microscopy and other techniques the porous structures that have formed. A mathematical model for the expansion and merging of domains of pores that propagate preferentially along the <111>A directions is also presented and used to explain the previously mentioned variations in current density.

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Towards Electrochemical Fabrication of Free-Standing Indium Phosphide Nanofilms

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Cited by 5 publications

References 39 publications

Anodic Formation of Nanoporous Indium Phosphide in KOH Electrolytes: Effects of Temperature and Concentration

Anodic Formation of Nanoporous Indium Phosphide in KOH Electrolytes: Effects of Temperature and Concentration

Etching Mechanisms in III-V Semiconductors: Electrochemical Etching of Indium Phosphide

Process of Formation of Porous Layers in n-InP

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