Towards fabrication of high-performing organic photovoltaics: new donor-polymer, atomic layer deposited thin buffer layer and plasmonic effects

Lim, Dong Chan; Kim, Kwang-Dae; Park, Sunyoung; Hong, Eun Mi; Seo, Hyun Ook; Lim, Jae Hong; Lee, Kyu Hwan; Jeong, Yongsoo; Song, Changsik; Lee, Eunji; Kim, Young Dok; Cho, Shinuk

doi:10.1039/c2ee23359b

Cited by 79 publications

(58 citation statements)

References 25 publications

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“…[22][23][24] The sol-gel based ZnO films of controlled thickness exhibited interesting, spontaneous formation of wrinkles upon annealing. 25 In addition to the functionality of selectively extracting electrons, ZnO wrinkles provided appropriate texturing and effectively increased the optical path length.…”

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confidence: 99%

Interface engineering for efficient fullerene-free organic solar cells

Shivanna

Rajaram

Narayan

2015

Applied Physics Letters

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We demonstrate the role of zinc oxide (ZnO) morphology and addition of an acceptor interlayer to achieve high efficiency fullerene-free bulk heterojunction inverted organic solar cells. Nanopatterning of the ZnO buffer layer enhances the effective light absorption in the active layer, and the insertion of a twisted perylene acceptor layer planarizes and decreases the electron extraction barrier. Along with an increase in current homogeneity, the reduced work function difference and selective transport of electrons prevent the accumulation of charges and decrease the electron-hole recombination at the interface. These factors enable an overall increase of efficiency to 4.6%, which is significant for a fullerene-free solution-processed organic solar cell.

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confidence: 99%

Interface engineering for efficient fullerene-free organic solar cells

Shivanna

Rajaram

Narayan

2015

Applied Physics Letters

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“…7 We show that additional ALD-ZnO layers with a thickness of 2 nm not only increased PCE of the photovoltaic, but also stability of the device performance significantly. Physical origin of the enhancement in initial performance and stability of the photovoltaic devices based on PTB7-F20 and ZnO-ripple structure by additional ALD-ZnO layers are discussed.…”

Section: Introductionmentioning

confidence: 93%

“…We have recently shown that the additional ALD-ZnO reduces number of surface defects on ZnO, which can act as electron-hole recombination center in OPV and reduce photocurrent. 7 In order to shed light on the durability of these solar cells fabricated in the present work, the photovoltaic performances of these two cells were measured after 179 days. It should be noted that these photovoltaic cells were stored for 179 days without encapsulation under ambient conditions.…”

Section: Methodsmentioning

confidence: 99%

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Enhanced Stability of Organic Photovoltaics by Additional ZnO Layers on Rippled ZnO Electron-collecting Layer using Atomic Layer Deposition

Kim¹,

Lim²,

Jeong³

et al. 2014

Bulletin of the Korean Chemical Society

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We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

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“…Liu et al reported that the V oc is determined by the energy difference between the HOMO energy level of the p-type conjugated conducting polymer such as PEDOT:PSS and the Fermi level of the metal when the value of the work function is larger than the electron affinity of Si [23]. The hybrid solar cells using the Ag rear electrode possess the electron affinity of Si of 4.05 eV and the work function of Ag of 4.6-4.8 eV [24][25][26][27], as depicted in the energy band models of Figure 6b; the theoretical values of V oc are 0.3-0.5 eV. Therefore, the lower V oc of the hybrid solar cells using the Ag rear electrode is attributable to the usage of Ag with the larger work function than the electron affinity of Si.…”

Section: Of 13mentioning

confidence: 99%

Improved Separation and Collection of Charge Carriers in Micro-Pyramidal-Structured Silicon/PEDOT:PSS Hybrid Solar Cells

et al. 2017

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Silicon (Si)/organic polymer hybrid solar cells have great potential for becoming cost-effective and efficient energy-harvesting devices. We report herein on the effects of polymer coverage and the rear electrode on the device performance of Si/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hybrid solar cells with micro-pyramidal structures. These hybrid solar cells provided adequate generation of charge carriers owing to the suppression of reflectance to below 13%. Additionally, the separation of the photogenerated charge carriers at the micro-pyramidal-structured Si/PEDOT:PSS interface regions and their collection at the electrodes were dramatically improved by tuning the adhesion areas of the PEDOT:PSS layer and the rear electrode materials, thereby attaining a power conversion efficiency of 8.25%. These findings suggest that it is important to control the PEDOT:PSS coverage and to optimize the rear electrode materials in order to achieve highly efficient separation of the charge carriers and their effective collection in micro-textured hybrid solar cells.

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Towards fabrication of high-performing organic photovoltaics: new donor-polymer, atomic layer deposited thin buffer layer and plasmonic effects

Cited by 79 publications

References 25 publications

Interface engineering for efficient fullerene-free organic solar cells

Interface engineering for efficient fullerene-free organic solar cells

Enhanced Stability of Organic Photovoltaics by Additional ZnO Layers on Rippled ZnO Electron-collecting Layer using Atomic Layer Deposition

Improved Separation and Collection of Charge Carriers in Micro-Pyramidal-Structured Silicon/PEDOT:PSS Hybrid Solar Cells

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