Towards frequency performance improvement of emerging devices without length scaling

Abstract

The improvement of the intrinsic high-frequency performance of emerging transistors is commonly based on reducing electron transit time and it is pursued by either reducing the channel length or employing novel high-electron-mobility materials. For gate-all-around transistors with lateral dimensions much shorter than their length, a careful analysis of the total time-dependent current shows that a time shorter than the electron transit time along the channel controls their high-frequency behavior. Both, the standard displacement current definition and the Ramo-Shockley-Pellegrini theorem are used to demonstrate this effect. Therefore, the highfrequency performance of such transistors, with a proper geometry design, can go beyond the intrinsic limits imposed by the electron transit time.

1/f noise in graphene

“…The second term of equation (2) vanishes in several cases of interest for the applications. Of course it is null when 0, R S = i.e., when the electrodes completely enclose Ω (and the Ramo-Shockley theorem is applicable as a particular case of the electrokinematics theorem [38]). Also for frequencies…”