Towards InAs/InP Quantum-Dash Laser-Based Ultra-High Capacity Heterogeneous Optical Networks: A Review

Abstract

The unprecedented increase in internet traffic witnessed in the last few years has pushed the community to explore heterogeneous optical networks, including free-space-optics (FSO) communication, radio-over-fiber (RoF), wireless (WL), and their convergent hybrid technologies. This stems from the possibility of seamless integration with the existing fiber-optic backhaul networks while providing muchneeded flexibility and scalability. Moreover, efficient optical transceivers, particularly light sources in the form of semiconductor laser diodes, are key in meeting the future demands of the next generation green optical access networks. In this respect, InAs/InP Quantum-dash (Qdash) nanostructure-based lasers have shown tremendous progress in the past few years with applications spanning from a wavelength division multiplexed (WDM) optical communication to recently, millimeter-wave (MMW) over fiber networks. This waveguide-based laser diode (LD) has demonstrated a rule-changing broad multi-wavelength lasing emission, thanks to the inherent and wavelength-tunable wide gain profile offered by the Qdash activegain region covering S-to U-band regions. Moreover, exploiting mode-locking and optical injection locking assisting techniques, highly coherent InAs/InP Qdash comb laser source at 1550 nm and 1610 nm have been respectively realized, thus opening a new paradigm for their potential applications in green optical and 5G access networks. In this work, progress on utilizing InAs/InP Qdash LD, supporting several sub-carriers, in energy-efficient ∼1550 nm and ∼1610 nm WDM heterogeneous optical networks with single-modefibers (SMF) has been highlighted, exhibiting aggregate data rates of 11 -12 Tb/s by employing a single device, and accommodating PAM4 and higher-order 32-QAM modulation schemes. Moreover, the recent deployment of this LD in the RoF domain, targeting MMW frequency band, for convergent fiber-wireless networks, is also summarized, with demonstrated 25 to >100 GHz MMW beat-tone frequency generates and transmission of up to 24 Gb/s.

Self−Mode−Locked 2−μm GaSb−Based Optically Pumped Semiconductor Disk Laser

“…The strong self−focusing of the laser beam combined with either a hard aperture or a soft aperture in Kerr medium is employed to produce a self−amplitude modulation [36]. In addition to mode−locked lasers, devices developed based on this mechanism also include wavelength/frequency division multiplexing [37][38][39], optical frequency comb [40][41][42][43], supercontinuum generation [44][45][46], and so on. However, there are currently no relevant reports on the Kerr effect in GaSb−based gain materials, nor have there been corresponding reports on self−mode−locked GaSb−based lasers.…”