Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode

Wang, Lei; Gong, Sidi; Yang, Cihui; Wen, Jinyu

doi:10.1515/nano.0034.2016-0029

Cited by 3 publications

(4 citation statements)

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“…In contrast, for the right gray region, these optimum parameters varied from 140 Ω −1 ·m −1 to 160 Ω −1 ·m −1 , and from 4.5 nm to 5 nm. Undoubtedly, to design a practicable device, the values of these characteristic parameters are pertinent to the inherent properties of materials which suggest that a thicker DLC layer usually exhibits a higher electrical conductivity [ 17 ]. Additionally, recent literature has reported that the electrical conductivity of a 5 nm DLC capping layer, when subjected to Joule heating, can sharply increase to 140 Ω −1 ·m −1 [ 18 , 19 ]; in contrast, a DLC capping layer with an electrical conductivity of 140 Ω −1 ·m −1 and a thickness of 5 nm appears to be a satisfying configuration that can simultaneously meet the temperature requirements for amorphization as well as the practicable measurements.…”

Section: Resultsmentioning

confidence: 99%

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Wang¹,

Yang²,

Wen³

et al. 2018

Nanomaterials

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Electrical probe memory using Ge2Sb2Te5 media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been devoted to the writing of crystalline bits using electrical probe memory while ignoring the viability of writing amorphous bits. Therefore, this paper proposes a physical, realistic, full three-dimensional model to optimize the practicable media stack by spatially and temporally calculating temperature distributions inside the active media during the writing of amorphous bits. It demonstrates the feasibility of using an optimized device that follows a Silicon/Titanium Nitride/Ge2Sb2Te5/Diamond-Like Carbon design with appropriate electro-thermal properties and thickness to achieve ultra-high density, low energy consumption, and a high data rate without inducing excessive temperature. The ability to realize multi-bit recording and rewritability using the designed device is also proven, making it attractive and suitable for practicable applications.

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Section: Resultsmentioning

confidence: 99%

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Wang¹,

Yang²,

Wen³

et al. 2018

Nanomaterials

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“…However, the bottom layer is commonly desired to have large electrical conductivity and low thermal conductivity to provide adequate current density and reduce heat dissipation towards substrate [97]. Several bottom electrodes with different compositions such as diamond-like carbon (DLC) [99], metal [100], and TiN [101], [102], have been implemented in the past. The thermal conductivity of the DLC layer can be experimentally minimized to 0.2 Wm −1 K −1 [103], giving rise to a good thermal insulation effect.…”

Section: Phase-change Memoriesmentioning

confidence: 99%

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Liu

Wang

2020

IEEE Access

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Phase-change materials, also well known as the Chalcogenide alloy, have received considerable attention during last two decades owing to its widespread applications in the field of the electrical storage market such as phase-change random access memory and phase-change probe memory. In addition to the storage devices, its unique electrical properties that can be dynamically tunable with respect to the electrical excitations lead to numerous novel applications represented by memristor and memristor-based neuromorphic electrical circuits. These emerging applications undoubtedly allows for a further exploitation of the potential of phase-change materials, and thus makes it advantageous over other storage medium like ferroelectric and magnetic materials. In order to help researchers understand the role of phase-change materials in these novel applications as well as their importance for citizen's daily life, a comprehensive review that not only covers the traditional storage applications, but also the applications on these exotic devices becomes imperative. In this review, the chemical structure of phase-change materials and their remarkable electrical properties are first reviewed, followed by an introduction of their applications on the storage fields. The physical principles of various emerging electrical devices using phase-change materials are subsequently overviewed in association with their state-of-the-art progress. The prospect of phase-change materials for the future non-volatile electrical applications that are yet to be unraveled is finally envisaged.

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“…Thus, in most studies, an optimized capping layer was designed as a DLC film with a thickness of 2–5 nm, an electrical conductivity of 50–100 Ω −1 ⋅m −1 , and a thermal conductivity of 0.2–0.5 W⋅m −1 ⋅K −1 . However, it was recently reported that DLC thin films exhibits strong thickness-dependent electrical conductivity [ 29 ], as illustrated in Figure 8 .…”

Section: Design Approaches Review Of Phase-change Electrical Probementioning

confidence: 99%

“… The dependence of the DLC film thickness on its electrical resistivity. Reprinted with permission from [ 29 ]. Copyright De Gruyter, 2016.…”

Section: Figurementioning

confidence: 99%

Overview of Phase-Change Electrical Probe Memory

Wang

Ren²,

Wen

et al. 2018

Nanomaterials

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Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.

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Towards low energy consumption data storage era using phase-change probe memory with TiN bottom electrode

Cited by 3 publications

References 0 publications

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Amorphization Optimization of Ge2Sb2Te5 Media for Electrical Probe Memory Applications

Applications of Phase Change Materials in Electrical Regime From Conventional Storage Memory to Novel Neuromorphic Computing

Overview of Phase-Change Electrical Probe Memory

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