2013
DOI: 10.1515/nanoph-2013-0018
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Towards low energy consumption integrated photonic circuits based on Ge/SiGe quantum wells

Abstract: Despite being an indirect bandgap material, germanium (Ge) recently appeared as a material of choice for low power consumption optical link on silicon. Thanks to a low energy difference between direct and indirect energy bandgap, optical transitions around the direct gap can be used to achieve strong electroabsorption or photodetection in a material already used in microelectronics circuits. However, many challenges have to be addressed such as the growth of germanium-rich structures on silicon or the modeling… Show more

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Cited by 5 publications
(4 citation statements)
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References 56 publications
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“…Si pillar seems to be pinned with the BOX and the SiO 2 cap during the cooling because of lower thermal energy, resulting in tensile strain formation. In the μ-Raman spectrum measured at ∼1 μm away from the Si pillar toward [1][2][3][4][5][6][7][8][9][10] direction [Shown as a red rectangle in Fig. 1(a)], the Si-Si peak at 516.0 cm −1 assigned to the Si pillar has disappeared.…”
Section: Resultsmentioning
confidence: 99%
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“…Si pillar seems to be pinned with the BOX and the SiO 2 cap during the cooling because of lower thermal energy, resulting in tensile strain formation. In the μ-Raman spectrum measured at ∼1 μm away from the Si pillar toward [1][2][3][4][5][6][7][8][9][10] direction [Shown as a red rectangle in Fig. 1(a)], the Si-Si peak at 516.0 cm −1 assigned to the Si pillar has disappeared.…”
Section: Resultsmentioning
confidence: 99%
“…The tensile strain is caused by the difference in thermal expansion between Si and SiGe and by the partial compressive strain of SiGe in lateral direction. The degree of the strain is slightly higher at the corner of the SiGe because the diagonal area is pulled by both [1][2][3][4][5][6][7][8][9][10] and [−1-10] directions. The Ge incorporation is increased by the tensile strain.…”
Section: Discussionmentioning
confidence: 99%
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