Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems

Abstract

This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Through the implementation of accurate and SPICE (Simulation Program with Integrated Circuit Emphasis)-compatible compact models of uni-traveling carrier photodiodes (UTC-PDs) and InP double heterojunction bipolar transistors (DHBTs), we demonstrated that the next generation of THz technologies for beyond-5G networks requires (i) a multi-physical understanding of their operation described through electrical, photonic and thermal equations, (ii) dedicated test structures for characterization in the frequency range higher than 110 GHz, (iii) a dedicated parameter extraction procedure, along with (iv) a circuit reliability assessment methodology. Developed on the research and development activities achieved in the past two decades, we detailed each part of the multiphysics design optimization approach while ensuring technology power loss management through a holistic procedure compatible with existing software tools and design flow for the timely and cost-effective achievement of THz OEICs.

Multiscale Compact Modelling of UTC-Photodiodes Enabling Monolithic Terahertz Communication Systems Design

“…The low values of the dark current implies a higher quality of the passivation of the junction in the UTC-PDs. We note here that a study of the dark currents at different temperatures along with compact model validation has been presented in a previous study where the model also showed excellent results [3].…”

“…For the InGaAs/InGaAsP UTC-PDs, the optical frequency response of the photodiodes was measured with a heterodyne measurement bench. A high responsivity of 0.79 A/W, at λ = 1550 nm, has been reported for these devices [3]. The optical frequency responses of the UTC-PDs are measured at -2 V bias under an optical power of 3 dBm.…”

“…The monolithic integration of optical and high-speed electronic devices on the same InP substrate minimizes the signal propagation losses between the two device types. The use of a common substrate could also offer a more compact footprint, simplified testing, and reduced costs [3,4].…”

“…Sci. 2021, 11, x FOR PEER REVIEW 2 of 18 a common substrate could also offer a more compact footprint, simplified testing, and reduced costs [3,4]. The architecture of OEI circuits and systems varies across application types and can rapidly become complex.…”

Interatomic Potential for InP

“…Indium phosphide attracts significant interest among all semiconductors due to its wide applications in electronics and photonics, for example, in applications in high-speed integrated circuits [ 1 ], photonic devices [ 2 , 3 ], photovoltaic [ 4 ], and high-efficiency solar cells [ 5 ]. The high absorption coefficient allows the InP to be an essential constituent also of many smart devices as quantum-dot light emitters [ 6 , 7 ], nanowires lasers [ 8 ], and nanowire photodetectors [ 9 ].…”