Towards single-chip radiofrequency signal processing via acoustoelectric electron–phonon interactions

Hackett, Lisa; Miller, Michael R.; Brimigion, Felicia; Domı́nguez, Daniel; Peake, Greg; Tauke‐Pedretti, Anna; Arterburn, Shawn; Friedmann, Thomas A.; Eichenfield, Matt

doi:10.1038/s41467-021-22935-1

Cited by 39 publications

(21 citation statements)

References 58 publications

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“…In the past, and again more recently [11], surface acoustic wave devices have been examined as radio frequency non-linear processors. In the past, these processors have been studied in the form of acoustic convolvers, parametric amplifiers, and frequency converters.…”

Section: Saw Reservoir Computingmentioning

confidence: 99%

Non-linear processing with a Surface Acoustic Wave reservoir computer

Meffan

Ijima

Banerjee

et al. 2023

Preprint

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Reservoir computing is a neural network algorithm that reduces the training needed for a neural network to be function. Recently, reservoir computing has been implemented using MEMs devices with prevalent non-linear dynamics to perform non-linear processing tasks. While partially explored in the past, there has been renewed interest in using Surface Acoustic Wave devices as low energy radio-frequency processors. However they have yet to be explored in the reservoir computing framework. In this work, a 39.16 MHz two-port SAW resonator on chemically reduced YZ Lithium Niobate is design and measured. The quality factor, insertion loss, linear transmission, and non-linear transmission of the devices is measured, and the relationship of these properties to reservoir computing is discussed. The SAW resonator is then configured as a time-multiplexed reservoir, and it's non-linear processing capabilities are discussed using the time-delayed parity benchmark.

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Section: Saw Reservoir Computingmentioning

confidence: 99%

Non-linear processing with a Surface Acoustic Wave reservoir computer

Meffan

Ijima

Banerjee

et al. 2023

Preprint

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“…Besides LOM systems, phonon lasers have also been built by using semiconductor superlattices 24 , nanomagnets 25 , ions 26 , and nanomechanical 27 or electromechanical 28 devices. These coherent sound sources, with shorter wavelength of operation than that of a photon laser of the same frequency, are indispensable in steering phonon chips 30 , improving the resolution of motional sensors 31 , and exploring new effects of phonons [32][33][34] . However, as far as we know, the ability of achieving multi-frequency phonon lasers with micro-size levitated objects, has not been reported.…”

Section: Harmonics Our Work Drives the Field Of Lom Technology Into A...mentioning

confidence: 99%

Nonlinear phonon laser with dissipation-governed levitated optomechanics

Kuang

Huang

Xiong

et al. 2022

Preprint

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Phonon lasers, exploiting coherent amplifications of phonons, have been a cornerstone for exploring quantum phononics, imaging nanomaterial structures, and realizing force sensors or phonon frequency combs. Single-mode phonon lasers, governed by dispersive optomechanical coupling, have been recently demonstrated via levitating a nanoparticle using an optical tweezer. Such levitated optomechanical (LOM) devices, with fundamental minimum of noises in high vacuum, can flexibly control large-mass objects with no internal discrete energy levels. However, it is still elusive to realize nonlinear multi-frequency phonon lasing with levitated microscale objects, dominated instead by dissipative LOM coupling due to much stronger optical scattering loss. Here, we report such a nonlinear phonon laser by employing a Yb3+-doped active LOM system. We observe a 3-order of magnitude enhancement for the fundamental-mode phonon lasing, compared with that in its passive counterparts. Above the lasing threshold, higher-order mechanical sidebands emerge spontaneously. Coherent correlations are also identified for the phonon modes. Our gain-assisted dissipative LOM platform no longer relies on any complicated external feedback control. Our work drives LOM into a new regime where it becomes promising to study mechanical properties or quantum entanglement of typical micro-size objects, such as atmospheric particulates and living cells, and build levitated force sensors with these objects for biomedical or astronomical applications.

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“…Gallium nitride (GaN) is a third‐generation wide‐bandgap semiconductor, with a promising potential in optoelectronics [ 1 , 2 ] and next‐generation power electronics, [ 3 , 4 , 5 , 6 ] owing to its intrinsic ability [ 7 ] to withstand ultrahigh current and power densities. However, the design of high‐power GaN devices is strongly affected by the self‐heating, [ 8 , 9 ] and accurate thermal management is needed to control the temperature of such devices.…”

Section: Introductionmentioning

confidence: 99%

Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal

et al. 2022

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Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a Gallium nitride (GaN) device when its characteristic length reaches the nanometer scale. In this work, the authors develop a tip‐enhanced Raman thermometry approach to study ballistic thermal transport within the range of 10 nm in GaN, simultaneously achieving laser heating and measuring the local temperature. The Raman results show that the temperature increase from an Au‐coated tip‐focused hotspot up to two times higher (40 K) than that in a bare tip‐focused region (20 K). To further investigate the possible mechanisms behind this temperature difference, the authors perform electromagnetic simulations to generate a highly focused heating field, and observe a highly localized optical penetration, within a range of 10 nm. The phonon mean free path (MFP) of the GaN substrate can thus be determined by comparing the numerical simulation results with the experimentally measured temperature increase which is in good agreement with the average MFP weighted by the mode‐specific thermal conductivity, as calculated from first‐principles simulations. The results demonstrate that the phonon MFP of a material can be rapidly predicted through a combination of experiments and simulations, which can find wide application in the thermal management of GaN‐based electronics.

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Towards single-chip radiofrequency signal processing via acoustoelectric electron–phonon interactions

Cited by 39 publications

References 58 publications

Non-linear processing with a Surface Acoustic Wave reservoir computer

Non-linear processing with a Surface Acoustic Wave reservoir computer

Nonlinear phonon laser with dissipation-governed levitated optomechanics

Ballistic Thermal Transport at Sub‐10 nm Laser‐Induced Hot Spots in GaN Crystal

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