Towards sub-Å electron beams

Krivanek, Ondrej L.; Dellby, Niklas; Lupini, A. R.

doi:10.1016/s0304-3991(99)00013-3

Cited by 608 publications

(336 citation statements)

References 5 publications

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“…Proof that these indeed constituted single layers was based on their Raman and optical properties [11], as well as on their unique plasmon behavior [12], in conjunction with quantification of their contrast in HAADF images [13]. All data were acquired in an aberration-corrected scanning transmission electron microscope (STEM) [14] (the Daresbury SuperSTEM), operated at 100 kV. This microscope is well characterized for its scan distortions [15], and it was ascertained they do not affect the analyses conducted herein.…”

Section: Methodsmentioning

confidence: 99%

Manifestation of ripples in free‐standing graphene in lattice images obtained in an aberration‐corrected scanning transmission electron microscope

Bangert

Gass

Bleloch

et al. 2009

Physica Status Solidi (a)

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1 Introduction The stability of extended twodimensional (2D) structures has been the subject of a longstanding theoretical debate, with previous suggestions that 2D films embedded in three-dimensional 3D space are crinkled. It was then countered that crinkles can be suppressed by anharmonic coupling between bending and stretching modes, such that a 2D membrane can exist but will nevertheless exhibit height fluctuations [1][2][3]. The mechanical behavior of graphene, the first true 2D crystal [4,5], can have profound impact on its extraordinary electronic properties [6]. Recent observations suggest that suspended graphene is not perfectly flat, but rather exhibits microscopic corrugations (ripples) which can be not only dynamic (that is, through flexural phonons) but also static [1,7,8]. In those observations, large-scale ripples (>15 nm) were visualized directly [9], whereas ripples on a

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Section: Methodsmentioning

confidence: 99%

Manifestation of ripples in free‐standing graphene in lattice images obtained in an aberration‐corrected scanning transmission electron microscope

Bangert

Gass

Bleloch

et al. 2009

Physica Status Solidi (a)

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“…To see light elements, such as B, an annular bright field (ABF) detector can be utilized, which collects electrons scattered at low scattering angles by the light elements. Thus, Z-contrast scanning transmission electron microscopy (STEM) images not only indicate the atomic arrangements, but also carry chemical information [25]. In case of elements with close atomic numbers displaying similar contrast in the Z-contrast image (e.g.…”

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confidence: 99%

Atomic structure and lattice defects in nanolaminated ternary transition metal borides

Kota

Barsoum

et al. 2016

Materials Research Letters

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We use analytical aberration-corrected high-resolution scanning transmission electron microscopy to image the atomic structure of the layered ternary transition metal (M) borides, Cr2AlB2, Fe2AlB2, and MoAlB. In these ternaries, MB layers and Al single or double atomic layers are interleaved. The atomic positions of the M elements and Al are clearly resolved by Z-contrast images. The following structural defects are also found and described herein: a 90 degrees twist boundary along [010] in Cr2AlB2, a tilt boundary in Fe2AlB2, and Mo2AlB2-like stacking faults in MoAlB, where some of the MB-based structures are intercalated by one (instead of two) Al layer(s).

Funding Agencies|Swedish Research Council; Knut and Alice Wallenberg Foundation [KAW 2008-0058, KAW 2011-0143, KAW 2015.0043]; Leverhulme Trust; Army Research Office [W911NF-11-1-0525]

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“…Data was acquired using the aberration corrected STEM microscope at SuperSTEM, Daresbury operating at 100 kV. Aberrations up to 3 rd order are corrected using a Nion Mark II Quadrupole-Octupole corrector [16] which results in a probe size of ~0.1 nm and 24 mrad semi-convergence angle. EELS spectra were acquired in spectrum imaging mode using an UHV ENFINA spectrometer at 0.3 eV/ channel dispersion and 19 mrad collection semi-angle.…”

Section: Methodsmentioning

confidence: 99%

A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy

2010

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Determining the bonding environment at a rough interface, using for example the near edge fine structure in electron energy loss spectroscopy (EELS), is problematic since the measurement contains information from the interface and surrounding matrix phase. Here we present a novel analytical method for determining the interfacial EELS difference spectrum (with respect to the matrix phase) from a rough interface of unknown geometry which, unlike multiple linear least squares (MLLS) fitting, does not require the use of reference spectra from suitable standards. The method is based on analysing a series of EELS spectra with variable interface to matrix volume fraction and, as an example, is applied to a TiN/ poly-Si interface containing oxygen in a HfO 2 -based, high-k dielectric gate stack. A silicon oxynitride layer was detected at the interface consistent with previous results based on MLLS fitting.

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Towards sub-Å electron beams

Cited by 608 publications

References 5 publications

Manifestation of ripples in free‐standing graphene in lattice images obtained in an aberration‐corrected scanning transmission electron microscope

Manifestation of ripples in free‐standing graphene in lattice images obtained in an aberration‐corrected scanning transmission electron microscope

Atomic structure and lattice defects in nanolaminated ternary transition metal borides

A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy

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