Towards the Development of Flexible Non‐Volatile Memories

Abstract

Flexible non-volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field-effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non-volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non-volatile memories.

An upconverted photonic nonvolatile memory

“…In this regard, IR-based electronic devices are under vigorous studies in both academia and industry for the rapid development of portable and flexible electronics 8,9 . Nonvolatile printed memory devices have great potential in modern electronic systems such as radio frequency identification tags, portable personal computers and sensors [10][11][12][13][14][15][16][17][18][19][20][21] . IR-sensing memory array can be used in various applications such as an integrated imaging system or light-assisted special storage; meanwhile, the non-visible light is more suitable for data encryption 22,23 .…”

Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution

“…A region with the same polarization direction is called a ferroelectric domain (FD). With their electrically switchable nature of polarization [2,3], ferroelectric materials [4][5][6] are important for various types of electronic applications [7][8][9]. The interest in these materials comes from not only their unique intrinsic piezoelectric and pyroelectric properties, but also the ability of precise manipulation and control of their FDs to the micro- [10] or even nanoscale [11].…”

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

“…Actually, most of the reported functional polymer based flexible FeRAMs over the past five years fall within the 7-8 lC/cm 2 P r range at room temperature. [16][17][18][19] Figure 4(c) depicts the reduction in memory window as a function of increased temperature. In supplementary Figure S2, we have shown representative memory window extraction plots at various temperatures.…”

“…10 Exciting progress has been achieved in flexible electronics 11,12 and ferroelectric flexible memories with organic materials research due to the natural flexibility of the material systems. [13][14][15][16][17][18][19] Nonetheless, key fundamental challenges exist with organic electronics related to their limited thermal budget and operation stability. 16 Another challenge is their ultra-large-scale-integration potential where memory devices must be ultra-scaled for ultra-high-density memory.…”

“…[13][14][15][16][17][18][19] Nonetheless, key fundamental challenges exist with organic electronics related to their limited thermal budget and operation stability. 16 Another challenge is their ultra-large-scale-integration potential where memory devices must be ultra-scaled for ultra-high-density memory. On the other hand, Zuo et al demonstrated flexible PZT ferroelectric capacitors on platinum (Pt) foil, in 2012, using transfer technique to harness the advantages of PZT in flexible ferroelectric memory.…”