Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Abstract

The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free electron concentration in InN layers from 2·1019 cm−3 to 3·1017 cm−3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm2 at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.

Atomic layer deposition of InN using trimethylindium and ammonia plasma

“…high frequency electronics and lasers. 1,2 Chemical vapor deposition (CVD) of InN using trimethylindium, (In(CH3)3, TMI) and ammonia (NH3), as precursors is limited by the thermal stability of the InN crystal above 500 ºC, as it decomposes to In metal and N2 gas at those temperatures. 3 This combined with the TMI decomposition (that occurs homogeneously in the temperature range 120−535 ºC), 4 and low reactivity of NH3 at temperatures below 500 ºC, 5 force the use of N/In ratios as high as 10 5 in CVD of InN.…”

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

“…In 1Àx Ga x N) enabling the utilization of a wide spectral range from near-infrared (NIR) to deep-UV wavelengths and therefore offering new opportunities to design LEDs, lasers, and multi-junction solar cells which cover almost the entire terrestrial solar radiation. [1][2][3][4][5][6][7] Additionally, the low electron effective mass of InN leads to a signicantly high electron mobility ($4400 cm 2 V À1 s À1 ) and a high saturation velocity when compared to other mature III-V compound semiconductors such as GaAs and GaN, which positions InN as a unique candidate for high-speed and highperformance electronic devices. [8][9][10][11][12] However, synthesis of high-quality and defect free InN lms via conventional growth techniques is quite challenging among other III-nitrides due to its low dissociation temperature, which leads to undesired decomposition into metallic In and N 2 gas around 500 C. [13][14][15][16] Conventional synthesis routes such as chemical vapor deposition (CVD), generally utilize NH 3 as the nitrogen co-reactant, which has relatively poor thermal reactivity and therefore require elevated process temperatures and excessively high (typically >10 4 ) NH 3 /TMI (V/III) ratios.…”

Излучательные Свойства Сильно Легированных Эпитаксиальных Слоев Нитрида Индия

“…Недавно авторами настоящей работы получена стимулированная эмиссия на длинах волн λ = 1.9−1.6 мкм при оптической накачке волноведущих гетероструктур InN/GaN/AlN/c-Al 2 O 3 с активными слоями n-InN, содержавшими от 3.6 • 10 17 до 2 • 10 19 см −3 равновесных электронов [12].…”