2015
DOI: 10.1016/j.carbon.2014.12.023
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Towards type-selective carbon nanotube growth at low substrate temperature via photo-thermal chemical vapour deposition

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Cited by 20 publications
(40 citation statements)
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“…This suggests the presence of a small proportion of SWCNTs. The radii of the SWCNTs deduced from ω RBM  = ( A/d t ) +  B are 1.07 nm and 1.03 nm35. Where ω RBM is the Raman frequency shift of the RBM in wavenumber (cm −1 ) and d t is the diameter of the CNT.…”
Section: Resultsmentioning
confidence: 99%
“…This suggests the presence of a small proportion of SWCNTs. The radii of the SWCNTs deduced from ω RBM  = ( A/d t ) +  B are 1.07 nm and 1.03 nm35. Where ω RBM is the Raman frequency shift of the RBM in wavenumber (cm −1 ) and d t is the diameter of the CNT.…”
Section: Resultsmentioning
confidence: 99%
“…Growth of pure (100%) m-SWNTs or s-SWNTs is still being pursued. Recent works [8], [9], [10], [11], [12], [13], [14], [15], [16] reported SWNT enrichments based on electronic type [8], [9], [10], [11], [12] and specific chiralities [15], [16]. However, achieving ondemand control of SWNTs type is still far from being solved.…”
Section: Introductionmentioning
confidence: 99%
“…Following the functionalisation procedure the I D /I G increased to 0.93±0.02, indicating an increased defect density in the CNT structure (Figure S2 & S3). Figure b concentrates on the D peak and G peak region before and after functionalisation, illustrating the increase in peak height and width for both peaks, again supporting the evidence for increased defect density . This is expected with increased defects acting to break the symmetry within this well‐developed hexagonal carbon sp 2 matrix.…”
Section: Resultsmentioning
confidence: 80%
“…The intensity ratio of the D peak compared to the G peak (I D /I G ) in the Raman spectra is a commonly used metric in CNT research, it is calculated to determine the relative quality of the CNTs . Prior to functionalisation an I D /I G of 0.35±0.01 was recorded, indicating high quality CNTs had been grown on the electrode areas, a result consistent with other PT‐CVD grown CNTs using similar interlayers and growth parameters . Moreover, the CNTs grown on this MEA device are of higher quality, for equivalent growth temperatures, compared to others who have used directly grown CNTs on MEA devices .…”
Section: Resultsmentioning
confidence: 99%
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