Trace detection of N_2 by KrF-laser-excited spontaneous Raman spectroscopy

Hargis, P. J.

doi:10.1364/ao.20.000149

Cited by 34 publications

(11 citation statements)

References 19 publications

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“…The combination of optics and spacing focused the central 6 mm of the beam through the 51-mm high flow path. A cuvette containing a dilute solution of butyl acetate was placed in front of the slit so as to reduce-but not eliminate-Rayleigh scattering 14,16 . The light was transmitted by the spectrograph to an intensified CCD camera.…”

Section: Ce5 Flame Tube-spontaneous Uv Raman Scatteringmentioning

confidence: 99%

<title>Optical measurement and visualization in high-pressure high-temperature aviation gas turbine combustors</title>

Hicks

Locke²,

Anderson

2000

SPIE Proceedings

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Section: Ce5 Flame Tube-spontaneous Uv Raman Scatteringmentioning

confidence: 99%

<title>Optical measurement and visualization in high-pressure high-temperature aviation gas turbine combustors</title>

Hicks

Locke²,

Anderson

2000

SPIE Proceedings

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“…These include tunable diode (infrared) laser absorption (Wormhoudt et al, 1983(Wormhoudt et al, , 1987, laser optogalvanic spectroscopy (Taillet, 1969;Walkup et al, 1983;Gottscho and Gaebe, 1986;Kramer, 1986;Goldsmith and Lawier, 1981;Webster and Rettner, 1983), and laser Raman spectroscopy (Hargis, 1981;Lapp, 1980;Eckbreth, 1980). The major disadvantages of absorption methods are that sensitivity is reduced compared to resonance fluorescence and absorption is a line of sight technique, requiring inversion methods to reconstruct spatial profiles.…”

Section: Other Laser Spectroscopiesmentioning

confidence: 99%

“…Spontaneous Raman spectroscopy (Hargis, 1981;Lapp, 1980), although widely applicable, suffers from low sensitivity; LIF is orders of magnitude more sensitive. Interference from scattered laser light and unwanted fluorescence can mask spontaneous Raman signals.…”

Section: Other Laser Spectroscopiesmentioning

confidence: 99%

“…Coherent Raman spectroscopy (e.g., coherent antiStokes Raman spectroscopy or CARS; Eckbreth, 1980) is more sensitive, but, is more difficult to apply. Hargis (1981) has pointed out that spontaneous Raman sensitivity can be improved by using pulsed UV lasers, assuming that some method to filter the laser fundamental can be found. A butyl acetate liquid filter was found to very efficiently reject 248 nm scattered laser light from a KrF excimer laser.…”

Section: Other Laser Spectroscopiesmentioning

confidence: 99%

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Plasma processing in microelectronics manufacturing

Graves

1989

AIChE Journal

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Plasma processing has emerged as an important technology for the deposition and etching of thin solid films in the manufacture of microelectronic devices. In fact, much of the progress achieved to date in device miniaturization would have been much more difficult without the unique characteristics of plasma processes. It is anticipated that future progress will continue to rely heavily on plasma technology. Although plasma chemical reactors are widely used, a lack of fundamental understanding has resulted in heavy reliance on empiricism in process design and control. The complexities inherent in any chemical reactor are compounded in plasma processing by the presence and active participation of the discharge in both gas phase and surface chemical processes. This has resulted in a technology that is sensitive to many design and operating parameters. A large parameter space gives process engineers flexibility in tailoring process conditions to meet objectives. However, without fundamental insight into the key physical and chemical processes, reactor design and control cannot be based on systematic, rational procedures. The purposes of this review are to introduce chemical engineers to plasma processing practice and phenomenology; to outline the progress made to date in fundamental studies of discharge physics and chemistry; to indicate areas in which chemical engineers must expand their traditional training to participate in plasma processing research; and finally to suggest how established chemical engineering methodology can be applied to plasma chemical reactors. David B. Graves Department of Chemical EngineeringUniversity of California Berkeley, CA 94720Introduction to Plasma Processing History, motivation, and future prospects Molecular gas plasmas are currently widely used in the microelectronics industry for the deposition and etching of thin solid films. Plasma processing is one of many techniques and processes used in the manufacture of integrated circuits (Doane et al., 1982), but the importance of plasma processing to present and future developments in microelectronics, coupled with the growing interest in this technology by chemical engineers, justifies a closer look at industrial practice and the underlying science. Simply stated, microelectronics manufacturing amounts to the growth, patterning, and doping of multiple layers of insulating, semiconducting, and conducting thin films (Hess, 1979). Consequently, deposition and selective etching of films is fundamental to many of the steps involved in this industry. It happens that chemically reacting, weakly ionized gas discharges are particularly powerful tools for depositing and removing thin films.Plasma etching is the more important process industrially, with VLSI (very large scale integration) relying upon the superior pattern transfer fidelity possible with plasma etching (a more or less equivalent term is reactive-ion etching). The utility of plasmas for etching hinges on their ability, under certain conditions, to remove material in the direction p...

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“…Refs 1 [1][2][3][4][5][6][7][8][9][10][11][12][13][14], and the theory is only briefly descr-ihed here.…”

Section: Raleae Seamering Is a Possiblementioning

confidence: 99%

Raman spectroscopy in the analysis of fire gases

et al. 1983

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Raman scattering is a possible technique for analysing gas mixtures. In the work here described Raman scattering was used for detection of gases extracted from different model fires, where wood, polymethylmetachrylate (PMMA) and polystyrene were used as test materials. Raman spectra of gas samples from differently ventilated model fires are presented as well as the variation of O2, CO2 and CO concentrations as a function of time with an effective time constant of less than 5 s. The sensitivity of the experimental set‐up was estimated to be about 1000 ppm, but suggestions are given how to reach a detection limit of about 1 ppm. The feasibility of the technique and various ways of improving it are briefly discussed.

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Trace detection of N_2 by KrF-laser-excited spontaneous Raman spectroscopy

Cited by 34 publications

References 19 publications

<title>Optical measurement and visualization in high-pressure high-temperature aviation gas turbine combustors</title>

<title>Optical measurement and visualization in high-pressure high-temperature aviation gas turbine combustors</title>

Plasma processing in microelectronics manufacturing

Raman spectroscopy in the analysis of fire gases

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