Trace gas detection with antimonide-based quantum-well diode lasers

Vicet, A.; Yarekha, Dmitri; Pérona, A.; Rouillard, Y.; Gaillard, S.; Баранов, А. Н.

doi:10.1016/s1386-1425(02)00055-0

Cited by 75 publications

(36 citation statements)

References 7 publications

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“…These high tuning values are explained by the large value of the thermal resistance R th = 130 K W −1 . Those values make the device well adapted to gas detection, even at atmospheric pressure where the absorption lines are as large as a few gigahertz [5]. Fig.…”

Section: Laser Characterisationmentioning

confidence: 98%

Application of antimonide diode lasers in photoacoustic spectroscopy

Schilt

Vicet

Werner

et al. 2004

Spectrochimica Acta Part A: Molecular and Biomolecular Spectros

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First investigations of photoacoustic (PA) spectroscopy (PAS) of methane using an antimonide semiconductor laser are reported. The laser fabrication is made in two steps. The structure is firstly grown by molecular beam epitaxy, then a metallic distributed-feedback (DFB) grating is processed. The laser operates at 2371.6 nm in continuous wave and at room temperature. It demonstrates single-mode emission with typical tuning coefficients of 0.04 nm mA −1 and 0.2 nm K −1 . PA detection of methane was performed by coupling this laser into a radial PA cell. A detection limit of 20 ppm has been achieved in a preliminary configuration that was not optimised for the laser characteristics.

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Section: Laser Characterisationmentioning

confidence: 98%

Application of antimonide diode lasers in photoacoustic spectroscopy

Schilt

Vicet

Werner

et al. 2004

Spectrochimica Acta Part A: Molecular and Biomolecular Spectros

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“…1) of the GaInAsSb/AlGaAsSb diode laser was prepared at Montpellier by molecular beam epi− taxy (MBE) and consists of three GaInAsSb/AlGaAsSb quantum wells, sandwiched between AlGaAsSb barrier lay− ers with varied composition, GaSb substrate and GaSb con− tact and buffer layers [38,39]. In order to obtain mono−mode emission at the desired wavelength, the ridged−stripe contact structure was pro− vided with a passive distributed feedback (DFB) element by electron lithography and the chip was mounted and encap− sulated at the Nanoplus−Nanosystems and Technologies GmbH, Oberer Kirchberg, Gerbrunn, Germany.…”

Section: Mqw -Gainassb/algaassb Diode Laser (Operating At Temperaturementioning

confidence: 99%

Infrared diode laser spectroscopy

Civiš

Cihelka²,

Matulková

2010

Opto-Electronics Review

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Three types of lasers (double-heterostructure 66 K InAsSb/InAsSbP laser diode, room temperature, multi quantum wells with distributed feedback (MQW with DFB) (GaInAsSb/AlGaAsSb based) diode laser and vertical cavity surface emitting lasers (VCSELs) (GaSb based) have been characterized using Fourier transform emission spectroscopy and compared. The photoacoustic technique was employed to determine the detection limit of formaldehyde (less than 1 ppmV) for the strongest absorption line of the v3 + v5 band in the emission region of the GaInAsSb/AlGaAsSb diode laser. The detection limit (less than 10 ppbV) of formaldehyde was achieved in the 2820 cm−1 spectral range in case of InAsSb/InAsSbP laser (fundamental bands of v1, v5). Laser sensitive detection (laser absorption together with high resolution Fourier transform infrared technique including direct laser linewidth measurement, infrared photoacoustic detection of neutral molecules (methane, form-aldehyde) is discussed.Additionally, very sensitive laser absorption techniques of such velocity modulation are discussed for case of laser application in laboratory research of molecular ions. Such sensitive techniques (originally developed for lasers) contributed very much in identifying laboratory microwave spectra of a series of anions (C6H−, C4H−, C2H−, CN−) and their discovery in the interstellar space (C6H−, C4H−).

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“…An alternative here is tunable-diode-laser-absorption-spectroscopy (TDLAS) -a rapid and contactless technique for gas detection [1][2][3] which uses a laser device to scan the wavelength range of several nanometres. For such a system only compact electricallypumped single-mode RT-CW operating laser sources are particularly suitable, for which it is possible to tune the wavelength over few nanometres around the desired wavelength without mode-hopping [1]. Two candidates can be considered for this application: DFBs (distributed feed-back lasers) and VCSELs.…”

Section: Introductionmentioning

confidence: 99%

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

Piskorski¹,

Frasunkiewicz²,

Sarzała³

2015

Bulletin of the Polish Academy of Sciences Technical Sciences

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Abstract. In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 µm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 µm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and -2%, respectively.

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Trace gas detection with antimonide-based quantum-well diode lasers

Cited by 75 publications

References 7 publications

Application of antimonide diode lasers in photoacoustic spectroscopy

Application of antimonide diode lasers in photoacoustic spectroscopy

Infrared diode laser spectroscopy

Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range

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