Tracing magnetic atom diffusion with annealing at the interface between CoMn alloy and MnGa layer by X-ray magnetic circular dichroism

We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly magnetized MnGa and FeCoB electrodes. In those perpendicular ( p-) MTJs, we utilized thin metastable bcc CoMn alloys as an interlayer between MnGa and MgO to enhance the tunnel magnetoresistance (TMR) effect. Moreover, we investigated the effect of a thin Mg interlayer between MnGa and CoMn. Owing to the interlayer engineering, we achieved a TMR ratio over 100%, the highest value observed for p-MTJs with a tetragonal MnGa electrode. Our study contributes to the further development of spintronic devices using p-MTJs with various Mn-based tetragonal alloy electrodes.

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Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy

Suzuki

Mizukami

2023

AIP Advances

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Tracing magnetic atom diffusion with annealing at the interface between CoMn alloy and MnGa layer by X-ray magnetic circular dichroism

Cited by 1 publication

References 38 publications

Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy

Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy

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