Tracing mechanism of optically and thermally stimulated luminescence in Lu2O3:Tb,M (M = Hf, Zr, Ti) ceramic storage phosphors

Sójka, Małgorzata; Kulesza, Dagmara; Bolek, Paulina; Trojan‐Piegza, Joanna; Zych, Eugeniusz

doi:10.1016/j.jre.2018.12.012

Cited by 11 publications

(17 citation statements)

References 22 publications

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“…We related this effect to the existence of two different sites that are occupied by Tb 3+ . 9 The site with the C 3i local symmetry that yields the PCE and PLE bands peaking at ∼310 nm and the site with C 2 local symmetry that yields the PCE and PLE bands below 280 nm. The relatively low photocurrent in the range of excitation of Tb 3+ positioned in the C 3i site compared to the Tb 3+ in the C 2 site verifies that the lowest 4f 7 5d 1 level (hereafter called d 1 ) of Tb 3+ (C 3i ) is barely coupled with the host conduction band at RT.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

“…These data show that, at RT, the excitation of Tb 3+ at 305 nm does not cause efficient ionization of the dopant. We related this effect to the existence of two different sites that are occupied by Tb 3+ . The site with the C 3i local symmetry that yields the PCE and PLE bands peaking at ∼310 nm and the site with C 2 local symmetry that yields the PCE and PLE bands below 280 nm.…”

Section: Resultsmentioning

confidence: 99%

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Properties of Charge Carrier Traps in Lu₂O₃:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

et al. 2020

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In this work, the kinetic study of charge carrier trapping processes, photocurrent excitation measurements, and high-pressure spectroscopy investigation of an optically stimulated luminescence (OSL) process in Lu 2 O 3 :Tb,Hf ceramics are presented. The OSL process was experimentally and theoretically treated to explain the OSL mechanism and kinetics. The obtained results allowed to propose an energetic structure of the system and a theoretical model that explains the charge exchange between Hf 4+ and Tb 3+ (upon charging the system). It was shown that the OSL took place via the conduction band and the depths of Hf traps were determined for the thermal (1.36 eV) and optical (2.95 eV) release and the significant difference between these two values was fully justified.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Properties of Charge Carrier Traps in Lu₂O₃:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

et al. 2020

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“…The addition of Hf codopant significantly improved the intensity of the TL glow. 31,32 Generally, codoping with d metals such as Ti, 20 Zr, 33 Hf, 10 V, 34 Nb, 22 and Ta 23 results in additional electron traps (likely related to the metal) and great improvements in the energy storage capacity as well as thermoluminescence intensity.…”

Section: ••mentioning

confidence: 99%

“…In Lu 2 O 3 :Pr sintered under N 2 –H 2 mixture, a single glow curve peak (although very weak) can be observed around 340 °C, , indicating the presence of an electron trap unrelated to the dopant, oxygen vacancies being a likely source. The addition of Hf codopant significantly improved the intensity of the TL glow. , Generally, codoping with d metals such as Ti, Zr, Hf, V, Nb, and Ta results in additional electron traps (likely related to the metal) and great improvements in the energy storage capacity as well as thermoluminescence intensity.…”

Section: Introductionmentioning

confidence: 98%

Oxygen Vacancy, Oxygen Vacancy–Vacancy Pairs, and Frenkel Defects in Cubic Lutetium Oxide

Shyichuk

Zych

2020

J. Phys. Chem. C

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Electronic and structural properties of cubic Lu2O3 with either single oxygen vacancy, oxygen vacancy–vacancy pair, or a Frenkel pair (an oxygen vacancy and an interstitial oxygen) were analyzed using ab initio density functional theory calculations. A plane-wave ultrasoft pseudopotential approach with local density approximation functional was used to optimize the geometries. A full-potential linearized augmented plane-wave method with meta-generalized gradient approximation was applied to the optimized geometries to calculate the electronic properties of the systems. Defect-related bands were observed between the valence band and the conduction band. Different charge states of the defects were considered. Both oxygen vacancy and oxygen vacancy–vacancy pairs behave as moderately deep electron traps (trap depth 1.3–2.7 eV). Trapped electron localization at the vacancy site(s) was confirmed using electron density and electron localization function plots. The bands originating from oxygen vacancy–vacancy pairs in Lu2O3 exhibit some dependence on the distance between the two entities. The resulting energy differences (considered from an optical absorption point of view) cover ultraviolet, visible, and infrared ranges. Thus, it is plausible that oxygen vacancy–vacancy pairs are responsible for the coloration that is sometimes observed in Lu2O3 powders and crystals. On the contrary, the Frenkel pair exhibits no systematic dependence of the defect-related bands on the distance between its oxygen vacancy and interstitial oxygen, while the resulting defect-related bands look similar to those corresponding to the isolated defects. Frenkel pairs are thus considered a probable mechanism of oxygen vacancy formation and stabilization of Lu2O3. Additionally, a brief review of the relevant experimental data is provided in the introduction.

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“…The energy levels of defects in the bandgap close to the CB minimum and VB maximum are regarded as electron and hole traps. The big and small [ 191] Tb 3+ , Hf 4+ 544 442 - [ 192] LiCaPO 4 Ce 3+ 369 Blue LED 0.6, 0.9 [ 193] LiNbO 3 Pr 3+ 620 980 - [ 194] Ca 4 Ti 3 O 10 Pr 3+ , Y 3+ 612 980 0.9-0.98 [ 195] LiTaO 3 Bi 3+ 430 808/980 0.55-1.16 [ 196] ZrO 2 -480 808/980 - [ 197] SrMoO 4 --470 0.9-1.95 [ 198] BeO Na + , Tb 3+ , Gd 3+ -470 - [ 199] Na + , Dy 3+ , Er 3+ 250 470 - [ 200] LiMgPO Tm 3+ 460 energy differences between the defect energy level and CB/VB differ the deep and shallow traps. [205,206] Though the incorporation of an activator can affect the intrinsic traps or even cause new traps, an effective way is to properly codope with a different ion to introduce the traps intentionally.…”

Section: Strategies For Introducing Traps and Modifying The Trap Distmentioning

confidence: 99%

Optically Stimulated Luminescence Phosphors: Principles, Applications, and Prospects

Yuan

Jin

et al. 2020

Laser & Photonics Reviews

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Optically stimulated luminescence (OSL) materials, enabling energy storage by capturing of charge carriers and then the energy conversion to light via photostimulation, can find many advanced applications in various fields, spanning from radiation dosimetry, optical data storage and security, environmental monitoring, biomedicine, clinical diagnostic, to archaeology and geology. At present, there are some blocks, including the development of nanocrystallization approaches, the tailoring of optical transitions, the control of trap distribution, and the understanding of OSL mechanisms, on the road to the exploration of OSL materials. This review gives an overview of the design, preparation, characterization, optimization, application, mechanism, and prospect of OSL materials. A short introduction of the fundamental principle and history of OSL materials is presented, followed by a summary of preparation and design methods, and a survey of OSL materials reported to date. The trap engineering, mechanism, and study methodologies of OSL are summarized, after which the widespread applications of OSL materials, in traditional and newly emerging fields, are reviewed. Finally, the merits and drawbacks of the OSL materials according to the relevant reports currently available are examined. The challenges and outlooks are highlighted and discussed in terms of five important aspects that merit future research.

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Tracing mechanism of optically and thermally stimulated luminescence in Lu2O3:Tb,M (M = Hf, Zr, Ti) ceramic storage phosphors

Cited by 11 publications

References 22 publications

Properties of Charge Carrier Traps in Lu₂O₃:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

Properties of Charge Carrier Traps in Lu₂O₃:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

Oxygen Vacancy, Oxygen Vacancy–Vacancy Pairs, and Frenkel Defects in Cubic Lutetium Oxide

Optically Stimulated Luminescence Phosphors: Principles, Applications, and Prospects

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Tracing mechanism of optically and thermally stimulated luminescence in Lu2O3:Tb,M (M = Hf, Zr, Ti) ceramic storage phosphors

Cited by 11 publications

References 22 publications

Properties of Charge Carrier Traps in Lu2O3:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

Properties of Charge Carrier Traps in Lu2O3:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

Oxygen Vacancy, Oxygen Vacancy–Vacancy Pairs, and Frenkel Defects in Cubic Lutetium Oxide

Optically Stimulated Luminescence Phosphors: Principles, Applications, and Prospects

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Product

Resources

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Properties of Charge Carrier Traps in Lu₂O₃:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity

Properties of Charge Carrier Traps in Lu₂O₃:Tb,Hf Ceramic Storage Phosphors Observed by High-Pressure Spectroscopy and Photoconductivity