2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) 2014
DOI: 10.1109/ipec.2014.6869884
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Traction inverter that applies compact 3.3 kV / 1200 A SiC hybrid module

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Cited by 32 publications
(26 citation statements)
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“…Vgsp must also be higher than SiC-MOSFET Miller voltage Vml. Thus, the maximum limit of Csp is calculated in (15). Gate discharging turn-off time constant for the proposed gate driver should exhibit a similar value with that of the conventional gate driver as expressed in (16), where Rgoff' is the turn-off gate resistor for the conventional gate driver as shown in Fig.…”
Section: Proposed Gate Driver Design Methodsmentioning
confidence: 99%
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“…Vgsp must also be higher than SiC-MOSFET Miller voltage Vml. Thus, the maximum limit of Csp is calculated in (15). Gate discharging turn-off time constant for the proposed gate driver should exhibit a similar value with that of the conventional gate driver as expressed in (16), where Rgoff' is the turn-off gate resistor for the conventional gate driver as shown in Fig.…”
Section: Proposed Gate Driver Design Methodsmentioning
confidence: 99%
“…The soft gate method also applies to hybrid SiC devices, as shown in (15). A dV/dt control method is proposed for SiC-JFET with cascode silicon MOSFETs in (16).…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the switching sequence resulting from CB-SPWM is symmetrical, as shown in Figure 4a. It is similar to the space vector PWM (SVPWM) in a three-phase PWM inverter, and either of two effective voltage vectors (01) and (10) is located symmetrically between two zero voltage vectors (00) and (11) in one switching sequence. Exact duration times for those effective and zero vectors are determined to satisfy the magnitude of Vc* on average during the single switching period Ts.…”
Section: Conventional Carrier-based Sinusoidal Pulse-width Modulationmentioning
confidence: 99%
“…In the case of railway vehicles, the application of multi-level power systems has not yet become commonplace in the market because it is important to design the propulsion system to be as simple and robust as possible for the system reliability, safety of passengers, overall system cost, and maintenance convenience. On the other hand, a propulsion system using Silicon Carbide (SiC)-IGBT has been reported due to the recent development of power devices [11,12]. SiC-IGBT shows improved characteristics including fast switching dynamics, high breakdown voltage, low switching losses, and high thermal capacity over Si-IGBT.…”
Section: Introductionmentioning
confidence: 99%
“…As a result, it makes more sense to build hybrid systems. Also at present, hybrid approach strikes a good balance between cost and efficiency achieved by these modules [24][25][26][27]. Also, it is worthwhile to point out that although SiC diodes and MOSFETs are available at 1.7 kV and lower voltages, there is no MOSFET supplier at 3.3 kV.…”
Section: Application Of Sic Devices In Hybrid Module Technologymentioning
confidence: 99%