2013
DOI: 10.1016/j.nima.2013.02.013
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Transconductance calibration of n-XYTER 1.0 readout ASIC

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Cited by 5 publications
(3 citation statements)
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“…For a silicon sensor of thickness equivalent to 300 µm the MIP will deposit ≈ 22400 electrons in the bulk medium. From a detailed calibration of the n-XYTER prototype front-end ASIC it has been derived that the 22400 electrons is equivalent to (176 ± 6) ADC [12]. Figure 4, describes the schematic of the set-up for the laser induced charge generation of the e-h pairs in the bulk silicon for detector characterization.…”
Section: Non-invasive Characterizationmentioning
confidence: 99%
“…For a silicon sensor of thickness equivalent to 300 µm the MIP will deposit ≈ 22400 electrons in the bulk medium. From a detailed calibration of the n-XYTER prototype front-end ASIC it has been derived that the 22400 electrons is equivalent to (176 ± 6) ADC [12]. Figure 4, describes the schematic of the set-up for the laser induced charge generation of the e-h pairs in the bulk silicon for detector characterization.…”
Section: Non-invasive Characterizationmentioning
confidence: 99%
“…The tests aimed at characterizing the signal transmission from the sensors through the cable bridge to the read-out electronics. The electronics employed was based on the n-XYTER ASIC, a self-triggering chip stemming from a different project that found use in testing early prototypes of several CBM detector systems with well known performance specifications [9]. One of the modules tested is shown in Fig.…”
Section: Test Of Prototype Modulesmentioning
confidence: 99%
“…The thickness of the silicon sensor are 300 µm thick and the 1 MIP will deposit ≈ 22.4 kilo electrons. From a detailed calibration of the n-XYTER prototype front-end ASIC it has been derived that the 22.4 kilo electrons is equivalent to 176 ± 6 ADC [11] .…”
Section: Infra-red Laser Characterizationmentioning
confidence: 99%