Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

Millithaler, J.‐F.; Pousset, J.; Reggiani, L.; Marinchio, H.; Varani, L.; Palermo, C.; Ziadé, P.; Matéos, J.; González, T.; Pérez, S.

doi:10.1016/j.sse.2010.11.003

Cited by 2 publications

(1 citation statement)

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“…Most of the previous work demonstrated the THz plasma wave instability in short-channel FET is essential to the realization of practical non-resonant detectors [4][5][6], resonant detectors [7], and the terahertz emitters [8] in the terahertz domain [4]. This instability phenomenon is also studied by method of hydrodynamic simulation, Monte Carlo simulations [9][10][11][12][13], full-wave hydrodynamic simulations [14], and so on.…”

Section: Introductionmentioning

confidence: 99%

THz plasma wave instability in field effect transistor with electron diffusion current density

Zhang

2018

Plasma Sci. Technol.

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The plasma wave instability in rectangle field effect transistors (FETs) is studied with electron diffusion current density by quantum hydrodynamic model in this paper. General dispersion relation including effects of electrical thermal motion, external friction associated with electron scattering effect, electron exchange-correlation contributions and quantum effects were obtained for rectangle FETs. The electron diffusion current density term is considered for further analysis in this paper. It is found that the quantum effects, the electron diffusion current density and electrical thermal motion enhance the radiation power and frequencies. But the electron exchangecorrelation effects and the electron scattering effects reduce the radiation power and frequencies. Results showed that a transistor has advantages for the realization of practical terahertz sources.

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