2018
DOI: 10.1080/10408436.2018.1433630
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Transfer-Free Graphene Growth on Dielectric Substrates: A Review of the Growth Mechanism

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Cited by 19 publications
(17 citation statements)
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“…The decrease in the number of graphene layers with increased CH 4 /H 2 gas flow ratio was observed in Figure 5 . It can be explained by competition between two processes: graphene growth due to the carbon-containing active species flux towards the surface [ 50 , 53 ] and etching of the carbon-carbon bonds by hydrogen [ 44 , 54 , 55 ]. If the CH 4 /H 2 ratio is too low, the etching reaction is much faster than the growth of the graphene layers [ 56 ].…”
Section: Discussionmentioning
confidence: 99%
“…The decrease in the number of graphene layers with increased CH 4 /H 2 gas flow ratio was observed in Figure 5 . It can be explained by competition between two processes: graphene growth due to the carbon-containing active species flux towards the surface [ 50 , 53 ] and etching of the carbon-carbon bonds by hydrogen [ 44 , 54 , 55 ]. If the CH 4 /H 2 ratio is too low, the etching reaction is much faster than the growth of the graphene layers [ 56 ].…”
Section: Discussionmentioning
confidence: 99%
“…Although, in recent years some progress has been made [14], this task still remains rather challenging especially because it is needed to be implemented on the industrial scale. Correspondingly, a scalable deposition of highly crystalline sp 2 -hybridized carbon films onto dielectric and semiconductor support is eagerly awaited because it will open avenues towards fabrication of graphene-based photonic and optoelectronic devices [2,15,16].…”
Section: Introductionmentioning
confidence: 99%
“…Unlike the past studies [31][32][33][34][35][36][37] that aimed at producing defect-free graphene by using a thick metal catalyst (> 50 nm), our objective is to produce films containing specific structural defects because of the critical effect of defects on the electrochemical properties of carbon materials 17,26,[38][39][40][41][42][43][44][45][46][47] . In our experiments, we observed that the thickness of the metal catalyst had a noticeable effect on the density of structural defects in the resulting NG carbon material.…”
Section: Synthesis Of Ng Carbon Material the Illustrations Inmentioning
confidence: 99%
“…The primary focus of the early research on this material synthesis technique, however, has been on the production of bulk sp 2 hybridized carbon materials mostly for applications in energy storage [28][29][30] . A new direction, more relevant for building miniaturized sensors, has been to apply this technique for making mono-and few-layer graphene on dielectric-coated substrates [31][32][33][34][35][36][37] . The main focus of these studies has been to generate defect-free graphene materials, which are ideal for high-speed electronic switches, but not for electrochemical sensors, where the performance strongly depends on structural defects 17,26,[38][39][40][41][42][43][44][45][46][47] .…”
mentioning
confidence: 99%