2013
DOI: 10.1002/adma.201205280
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Transferable and Flexible Label‐Like Macromolecular Memory on Arbitrary Substrates with High Performance and a Facile Methodology

Abstract: A newly designed transferable and flexible label-like organic memory based on a graphene electrode behaves like a sticker, and can be readily placed on desired substrates or devices for diversified purposes. The memory label reveals excellent performance despite its physical presentation. This may greatly extend the memory applications in various advanced electronics and provide a simple scheme to integrate with other electronics.

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Cited by 58 publications
(57 citation statements)
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“…The electrical switching effect of the memory is explained by the charge-trapping mechanism and percolation effects as shown in previous reports. 23,38 After characterizing the WORM-type organic memory under relaxed conditions, we then analyzed a programmed ON-state under different stretching conditions to confirm that the coded highconductivity ON-state can be maintained after strain. As shown in Figure 4a, the device in its ON-state can keep its programmed highcurrent status regardless of being re-strained from 10% to pre-strain, indicating that the memory effects were not affected by re-stretching the memory to pre-strain conditions, which is promising for its use with memory applications in stretchable electronic systems.…”
Section: Resultsmentioning
confidence: 99%
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“…The electrical switching effect of the memory is explained by the charge-trapping mechanism and percolation effects as shown in previous reports. 23,38 After characterizing the WORM-type organic memory under relaxed conditions, we then analyzed a programmed ON-state under different stretching conditions to confirm that the coded highconductivity ON-state can be maintained after strain. As shown in Figure 4a, the device in its ON-state can keep its programmed highcurrent status regardless of being re-strained from 10% to pre-strain, indicating that the memory effects were not affected by re-stretching the memory to pre-strain conditions, which is promising for its use with memory applications in stretchable electronic systems.…”
Section: Resultsmentioning
confidence: 99%
“…The stability of the long-term retention might be expected because of the high activation energy of the P3BT-trapped charge carriers. 38 At the writing voltage, numerous carriers were injected from the electrode, which filled up the P3BT trapping sites, and the percolation pathways of the carriers were formed among these charge-filled P3BTs, resulting in the electrical switching behavior and the subsequent high conductivity ON-state. Owing to the stability of the P3BT-trapped charges within the PMMA matrix, the organic memory can retain the programmed high conductivity state over the long term even after the power supply has been removed.…”
Section: Resultsmentioning
confidence: 99%
“…In particular, Si semiconductor fabrication requires high‐temperature processes such as doping and thin film deposition, and these cannot be applied to a flexible substrate for use in skin‐attachable wearable devices. A number of alternative materials have been studied to overcome these limitations, and organic‐based RRAMs are an attractive candidate, presenting advantages such as flexibility and a simple fabrication process . However, these organic‐based RRAMs are difficult to be apply for skin‐attachable wearable devices due to their sensitivity to external environmental factors.…”
Section: Introductionmentioning
confidence: 99%
“…In the past few decades, organic semiconductors have received considerable attentions because of their advantages such as easy preparation process for large-area, lowcost manufacture, which make them promising to fabricate flexible, low-cost and lightweight electronic components [1][2][3][4][5][6]. Recently, organic thin film devices showed rapid development, which injected more vitality for their application due to their much better device performance than amorphous silicon [7].…”
Section: Introductionmentioning
confidence: 99%