Transformation of metallic boron into substitutional dopants in graphene on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>6</mml:mn><mml:mi>H</mml:mi></mml:mrow><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">SiC</mml:mi><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mo>)</mml:mo></mml:math>

Sforzini, Jessica; Telychko, Mykola; Krejčí, Ondřej; Vondráček, Martin; Švec, Martin; Bocquet, François C.; Tautz, F. Stefan

doi:10.1103/physrevb.93.041302

Cited by 7 publications

(6 citation statements)

References 29 publications

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“…Figures 1(d) and (e) also show that this component is present at all preparation temperatures. Hence, some of the boron atoms must have diffused into the bulk, an effect that has already been reported earlier [46]. The other two components at 192.6 eV and 191.8 eV (labeled B BxNy and B ZL ) are located closer to the surface and stem from the B x N y layer and from the boron ZL underneath, respectively.…”

Section: A Preparation Temperature Dependency Of the Layer Structure ...supporting

confidence: 51%

Boron nitride on SiC(0001)

Lin,

Franke,

Parhizkar

et al. 2022

Preprint

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Section: A Preparation Temperature Dependency Of the Layer Structure ...supporting

confidence: 51%

Boron nitride on SiC(0001)

Lin,

Franke,

Parhizkar

et al. 2022

Preprint

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“…These charges are localized at the atom sites and extend only a few angstroms into the graphene basal plane, which is fully consistent with the spatial confinement of the charge observed in the LCPD map. The net charge on the boron/nitrogen dopants originates from acceptance/donation of an electron to the graphene pi-band , and subsequent electronic redistribution.…”

Section: Results and Discussionmentioning

confidence: 99%

“…Once a sharp 3 × 3 LEED pattern was acquired, the graphene was grown by annealing up to 1300 °C, increasing 50 °C every 5 min. Boron doping 32 was achieved by sublimating B from a commercial evaporator on the already-grown graphene at RT (a flux of 26 nA for 20 s was enough to obtain a low concentration of dopants) and a final annealing at 1150 °C for 20 min. The growth and the doping were monitored by means of LEED and STM.…”

Section: ■ Methodsmentioning

confidence: 99%

Atomic-Scale Charge Distribution Mapping of Single Substitutional p- and n-Type Dopants in Graphene

Mallada

Edalatmanesh

Lazar

et al. 2020

ACS Sustainable Chem. Eng.

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Tuning the chemical properties of graphene by controlled doping is a widely investigated strategy. The effect of a substitutional single dopant on graphene local reactivity is much less explored. To improve the understanding of the role of p-and n-type dopants in graphene's local chemical activity and quantification of its interaction with single molecules, we report an atomic-scale investigation of single boron (B) and nitrogen (N) dopants in graphene and their interactions with CO molecules by means of atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) experiments and theoretical calculations. We infer that N/B doping significantly increases/ lowers the chemical interaction of graphene with individual CO molecules as a result of weak electrostatic forces induced by distinct charge distribution around the dopant site. High-resolution AFM images allow dopant discrimination and their atomic-scale structural characterization, which may be crucial for the atomic-scale design of graphene derivatives with relevant potential applications in molecular sensing and catalysis.

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“…Ion sputtering deposition under Ar/CH 4 atmosphere allows control of the relative concentration but lead to a segregation of C and BN domains for most of the concentration [85]. Telychko et al produced B-doped graphene by growing graphene on SiC under an Si flux produced by heating an heavily B-doped Si wafer and characterized it by STM/AFM [86] and NEXAFS [87]. The post-growth nitrogen doping technique could then be applied to their sample to produce B-N co-doped samples, subsequently characterized by STM as shown in Fig. 12 [86].…”

Section: B-n Codopingmentioning

confidence: 99%

Electronic properties of chemically doped graphene

Joucken

Henrard

Lagoute

2019

Phys. Rev. Materials

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Chemical doping of graphene is the most robust way of modifying graphene's electronic properties. We review here the results obtained so far on the electronic structure and transport properties of chemically-doped graphene, focusing on the results obtained with scanning tunneling micropscopy/spectroscopy (STM/S), angle-resolved photoemission spectroscopy (ARPES), and magnetoresistance (MR) measurements. The majority of the results reported have been obtained on nitrogendoped samples, but boron-doped graphene has also been well documented. Besides the appearance of the dopant on STM topographic images, the main questions that have been addressed are the atomic configurations of the doping and their doping efficiency (number of electron/hole brought to the graphene lattice). Both can be addressed by a local probe such as STM/S. The doping efficiency has also been complementary studied via direct visualization of the band structure with ARPES. The effect of the dopants on the electronic transport properties and in particular their influence on the scattering mechanisms is also presented. Finally, avenues for future research efforts are suggested.

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Transformation of metallic boron into substitutional dopants in graphene on6H−SiC(0001)

Cited by 7 publications

References 29 publications

Boron nitride on SiC(0001)

Boron nitride on SiC(0001)

Atomic-Scale Charge Distribution Mapping of Single Substitutional p- and n-Type Dopants in Graphene

Electronic properties of chemically doped graphene

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