2011
DOI: 10.1016/j.jelechem.2011.05.023
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Transformation of porous structure of anodic alumina films formed during galvanostatic anodising of aluminium

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Cited by 27 publications
(24 citation statements)
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References 59 publications
(189 reference statements)
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“…This well-known chemical reaction is the result of the combination of the complex chemical and electrochemical reactions that take place in the different interfaces, that is, cathode/electrolyte, electrolyte/Al 2 O 3 , and Al/Al 2 O 3 , which have been extensively studied in the literature (Thompson et al, 1978(Thompson et al, , 1987Thompson and Wood, 1983;Thompson, 1997;Garcia-Vergara et al, 2006a;Patermarakis, 2009;Patermarakis and Moussoutzanis, 2011;Lee and Park, 2014). The anodic current density I A is determined by the electric field-driven migration of the electrolyte anions involved in the anodic reactions (namely, Al 3+ and O 2À ) and, according to the high field conduction theory (G€ untherschulze and Betz, 1934;Cabrera and Mott, 1949), it is related to the potential drop across the barrier layer DV by:…”
Section: Mild Anodizationmentioning
confidence: 99%
“…This well-known chemical reaction is the result of the combination of the complex chemical and electrochemical reactions that take place in the different interfaces, that is, cathode/electrolyte, electrolyte/Al 2 O 3 , and Al/Al 2 O 3 , which have been extensively studied in the literature (Thompson et al, 1978(Thompson et al, , 1987Thompson and Wood, 1983;Thompson, 1997;Garcia-Vergara et al, 2006a;Patermarakis, 2009;Patermarakis and Moussoutzanis, 2011;Lee and Park, 2014). The anodic current density I A is determined by the electric field-driven migration of the electrolyte anions involved in the anodic reactions (namely, Al 3+ and O 2À ) and, according to the high field conduction theory (G€ untherschulze and Betz, 1934;Cabrera and Mott, 1949), it is related to the potential drop across the barrier layer DV by:…”
Section: Mild Anodizationmentioning
confidence: 99%
“…In contrast to the flourishing picture of applications of anodic porous alumina in various fields, the formation mechanism of anodic porous alumina has been continuously investigated and under debate for more than six decades [1,96,, i.e., from Edwards and Keller [145,146] [147][148][149] in the 1970-1980s, Parkhutik and Shershulsky [130], Golovin et al [132][133][134], Jessensky et al [137,150], Li et al [99,138], in the 1990s, Patermarakis et al [135,136,[151][152][153][154], Garcia-Vergara et al [155][156][157][158][159][160] in the 2000-2010s, and most recently Hebert and Houser [139][140][141][142][143] in 2012. However, contradictory viewpoints still exist and no generally accepted theory has been established.…”
Section: Formation Mechanisms Of Anodic Porous Aluminamentioning
confidence: 99%
“…Since the pioneering work in 1950s by Keller [102], Dewald [204,205], Vermilyea [206,207], and Cabrera and Mott [163], several groups have carried out further theoretical work, including the Wood and Thompson group in Manchester [2,95,96,118,128,155,156,208], the Gösele group in Max-Plank-Institute [99,137,138,150,178], the Patermarakis group in Greece [135,136,[151][152][153][154], the Parkhutik group in Minsk [130,209], the Golovin group in Northwestern [132][133][134], and the Hebert group in Iowa State [139][140][141][142][143]. Systematical elucidation of the theory in mathematical forms began from work done by the Parkhutik group [130] in 1992, and numerical simulation was started by the Golovin [133] and Hebert [139] groups in 2006.…”
Section: Objectives and Flow Of The Present Researchmentioning
confidence: 99%
“…Al is oxidized to Al 3+ at the m|o interface in a quantity that obeys Faraday's law (see also later). In pore forming anodising oxide is formed solely near this interface [38][39][40]. Part of Al 3+ equal to O 2À transport number tn an reacts with O 2À reaching there to form oxide at rate jS g tn an (6F) À1 mol s À1 where F is Faraday's constant.…”
Section: Processes In the Barrier Layer And In The Electrolyte In Pormentioning
confidence: 99%