Transformation of Ti and TiN Cap Layer by Via-Hole Etching

Sudo, Shoji; Ichihashi, Yoshinari; Ikeda, Norihiko; Taketa, K.; Marneno, K.

doi:10.1109/ppid.1996.715245

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“…PPD to MOSFET performances is evaluated by monitoring gate induced drain leakage in planar devices in the case of PPD after CF 4 /Ar plasma exposure. 173) Sudo et al investigated 174) the surface modification of Ti electrode after CHF 3 /CF 4 /Ar plasma exposure by measuring the contact resistance change. An increase in the resistance was found to be attributed to the surface oxidation or fluorination of a Ti layer, not on a TiN layer.…”

Section: Electrical Characterizationmentioning

confidence: 99%

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

Eriguchi

2021

Jpn. J. Appl. Phys.

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Plasma processing plays an important role in manufacturing leading-edge electronic devices such as ULSI circuits. Reactive ion etching achieves fine patterns with anisotropic features in metal-oxide-semiconductor field-effect transistors (MOSFETs). In contrast, it has been pointed out over the last four decades that plasma processes not only modify the surface morphology of materials but also degrade the performance and reliability of MOSFETs as a result of defect generation in materials such as crystalline Si substrate and dielectric films. This negative aspect of plasma processing is defined as plasma (process)-induced damage (PID) which is categorized mainly into three mechanisms, i.e. physical, electrical, and photon-irradiation interactions. This article briefly discusses the modeling of PID and provides historical overviews of the characterization techniques of PID, in particular, by the physical interactions, i.e. ion bombardment damage.

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Section: Electrical Characterizationmentioning

confidence: 99%

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

Eriguchi

2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Transformation of Ti and TiN Cap Layer by Via-Hole Etching

Cited by 1 publication

References 1 publication

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

Characterization techniques of ion bombardment damage on electronic devices during plasma processing—plasma process-induced damage

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