2010
DOI: 10.1007/s10470-010-9574-5
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Transformer-coupled cascode stage for mm-wave power amplifiers in sub-μm CMOS technology

Abstract: An amplifier topology based on a transformercoupled cascode stage is presented and compared with the most used solutions for sub-lm CMOS power amplifiers, which are the common-source stage, cascode stage, and capacitive-coupled cascode stage. The comparison was carried out by designing each amplifier in a 65-nm CMOS technology and for a 60-GHz operating frequency. The design was optimized for a trade off among power gain, saturated output power, and linearity. Operating from a 1.2-V supply voltage, the propose… Show more

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Cited by 7 publications
(1 citation statement)
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“…This approach is motivated by the considerations discussed below. Integrated transformers are very important passive components, especially at mm-wave frequencies, since they are extensively adopted to implement several crucial functions, such as single-ended-to-differential and differential-to-single-ended conversions along with electrostatic discharge (ESD) protection at input/output antenna interfaces [13][14][15][16][17], resonant load in RF/mm-wave amplification stages [18,19], LC tank in oscillators [20][21][22], power combining [23,24], etc. Moreover, differently from simple spiral inductors that can highly benefit from top thick metal along with multi-layer structures and maximum oxide thickness to outdistance from the substrate, integrated transformer configurations provide more complete information on the BEOL, since they also include the effects of lower metals and intermetal oxide thickness.…”
Section: Testbench For the Beol Comparison: Integrated Transformers A...mentioning
confidence: 99%
“…This approach is motivated by the considerations discussed below. Integrated transformers are very important passive components, especially at mm-wave frequencies, since they are extensively adopted to implement several crucial functions, such as single-ended-to-differential and differential-to-single-ended conversions along with electrostatic discharge (ESD) protection at input/output antenna interfaces [13][14][15][16][17], resonant load in RF/mm-wave amplification stages [18,19], LC tank in oscillators [20][21][22], power combining [23,24], etc. Moreover, differently from simple spiral inductors that can highly benefit from top thick metal along with multi-layer structures and maximum oxide thickness to outdistance from the substrate, integrated transformer configurations provide more complete information on the BEOL, since they also include the effects of lower metals and intermetal oxide thickness.…”
Section: Testbench For the Beol Comparison: Integrated Transformers A...mentioning
confidence: 99%