2012 5th International Conference on Computers and Devices for Communication (CODEC) 2012
DOI: 10.1109/codec.2012.6509213
|View full text |Cite
|
Sign up to set email alerts
|

Transformer coupled novel noise cancellation technique for subthreshold UWB LNA

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2019
2019
2022
2022

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(3 citation statements)
references
References 12 publications
0
3
0
Order By: Relevance
“…( 1)-( 2), the gm/IDS of the weak inversion region is about three times larger than that of the pentode region. Therefore, LNAs with their transistors operated in the subthreshold regions have been studied [9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30]. As shown in Eqs.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…( 1)-( 2), the gm/IDS of the weak inversion region is about three times larger than that of the pentode region. Therefore, LNAs with their transistors operated in the subthreshold regions have been studied [9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30]. As shown in Eqs.…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, if ๐‘„ ๐ฟ ๐บ is high, for instance using an external inductor (๐‘„ ๐ฟ ๐บ = 40 ) , the difference between the minimum NF and NF in the saturation region is small but if ๐‘„ ๐ฟ ๐บ is low, for instance using an on-chip inductor (๐‘„ ๐ฟ ๐บ = 5, 10 ), the difference between them is large, so, it is necessary to be operated MI region in the case of the on-chip inductor is implemented. However, because the gain is low, a multi-stage amplifier is required, but this increases the power consumption, so a current-reuse multi-stage amplifier is being investigated [24,25,26,27,28,29,30,31,32].…”
Section: Introductionmentioning
confidence: 99%
“…Since gate current is a component contributing to shot noise, decreased leakage gate current improves the noise performance of the HEMTs [9]. Several amplifier architectures are considered which includes distributed amplifier, lumped feedback amplifier, cascode and cascade topology [10][11][12][13][14][15]. For UWB, the distributed amplifier requires more number of transistors than the lumped feedback which consume more power.…”
Section: Introductionmentioning
confidence: 99%