Transient analysis of the impact stage of wirebonding on Cu/low-K wafers

Yeh, Chang-Lin; Lai, Yi‐Shao

doi:10.1016/j.microrel.2004.04.026

Cited by 26 publications

(2 citation statements)

References 6 publications

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“…The material effect of bond wire on a Cu low-K structure was presented by Degryse et al using implicit time integration method [5]. The same method was used by Yeh et al [6,7] in conducting stress comparison between the impact and ultrasonic vibration stages of the Cu low-K structure during gold wire bonding.…”

Section: Introductionmentioning

confidence: 99%

Analysis of LED wire bonding process using arbitrary Lagrangian-Eulerian and explicit time integration methods

Lin

Tsai

et al. 2013

2013 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

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Wire bonding is one of the main processes used to connect the signal of light emitting diode (LED) chips. Failures, such as pad peeling, cracking, and delamination, affect the development of LED, and some of these failures are influenced by the wire bonding process. This research aims to construct an effective simulation methodology for the impact stage of the wire bonding process.An effective simulation methodology utilizing the explicit method with a second level accuracy arbitrary Lagrangian-Eulerian (ALE) algorithm is successfully achieved. Only a 0.5% discrepancy in ball height between this model and the actual wire bonding sample is observed after the impact stage, and the geometry of the bonded wire is similar to that of the actual wire. The finite element (FE) model established in this research not only conquers the element distortion problem, but proposes an effective methodology for simulating the wire bonding process in the future.

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Section: Introductionmentioning

confidence: 99%

Analysis of LED wire bonding process using arbitrary Lagrangian-Eulerian and explicit time integration methods

Lin

Tsai

et al. 2013

2013 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)

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“…1 The number of wire bonding applications that are utilizing materials such as Cu wire [2][3][4][5][6][7][8][9] and low-k substrates [10][11][12] is increasing, due to the benefits of lower cost and higher performance, respectively. However, higher stresses result when bonding Cu wire; and low-k substrates are sensitive to high stresses; both of these factors result in increased rates of IC defects such as chip cratering.…”

Section: Introductionmentioning

confidence: 99%

In Situ Studies of the Effect of Ultrasound During Deformation on Residual Hardness of a Metal

Lum

Hang

Mayer

et al. 2009

Journal of Elec Materi

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A method is developed using an ultrasonic wire bonder to systematically study in situ the effect of superimposed ultrasound during deformation on the residual hardness of a metal wire. The method is applied during ultrasonic ball bonding of Au wire. It is found that 69 mW applied ultrasonic power during deformation of the Au balls leads to lower residual hardness than similarly deformed Au balls without applied ultrasound; this may be beneficial in reducing defects in applications sensitive to bonding stresses. It is confirmed that, although samples deformed with applied ultrasound experience larger strain rates than samples deformed without, strain rate hardening (if it does exist) does not change the finding that ultrasound applied during deformation of Au leads to lower residual hardness.

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Footprint study of ultrasonic wedge-bonding with aluminum wire on copper substrate

Lum

Mayer

Zhou

2006

Journal of Elec Materi

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The effects of the process parameters of ultrasonic power and normal bonding force on bond formation at ambient temperatures have been investigated with scanning electron microscopy (SEM) and energy-dispersive x-ray (EDX) analysis. A model was developed based on classical microslip theory 1 to explain the general phenomena observed in the evolution of bond footprints left on the substrate. Modifications to the model are made due to the inherent differences in geometry between ball-bonding and wedge-bonding. Classical microslip theory describes circular contacts undergoing elastic deformation. It is shown in this work that a similar microslip phenomenon occurs for elliptical wireto-flat contacts with plastically deformed wire. It is shown that relative motion exists at the bonding interface as peripheral microslip at lower powers, transitioning into gross sliding at higher powers. With increased normal bonding forces, the transition point into gross sliding occurs at higher ultrasonic bonding powers. These results indicate that the bonding mechanisms in aluminum wire wedge-bonding are very similar to those of gold ball-bonding, both on copper substrate. In ultrasonic wedge-bonding onto copper substrates, the ultrasonic energy is essential in forming bonding by creating relative interfacial motion, which removes the surface oxides.

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Transient analysis of the impact stage of wirebonding on Cu/low-K wafers

Cited by 26 publications

References 6 publications

Analysis of LED wire bonding process using arbitrary Lagrangian-Eulerian and explicit time integration methods

Analysis of LED wire bonding process using arbitrary Lagrangian-Eulerian and explicit time integration methods

In Situ Studies of the Effect of Ultrasound During Deformation on Residual Hardness of a Metal

Footprint study of ultrasonic wedge-bonding with aluminum wire on copper substrate

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