Transient characteristics of β-Ga₂O₃ nanomembrane Schottky barrier diodes on various substrates

Abstract

In this paper, transient delayed rise and fall times for beta gallium oxide (β-Ga2O3) nanomembrane (NM) Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under different temperature conditions. The devices exhibited noticeably less-delayed turn on/turn off transient time when β-Ga2O3 NM SBDs were built on a high thermal conductive (high-k) substrate. Furthermore, a relationship between the β-Ga2O3 NM thicknesses under different temperature conditions and their transient characteristics were systematically investigated and verified it using a multiphysics simulator. Overall, our results revealed the impact of various substrates with different thermal properties and different β-Ga2O3 NM thicknesses on the performance of β-Ga2O3 NM-based devices. Thus, the high-k substrate integration strategy will help design future β-Ga2O3-based devices by maximizing heat dissipation from the β-Ga2O3 layer.

A Review of β-Ga2O3 Power Diodes

“…Experiments have demonstrated that integrating β-Ga 2 O 3 heterostructures onto highthermal-conductivity substrates can effectively enhance device heat dissipation. One of the most effective solutions is to utilize diamond substrates to grow Ga 2 O 3 thin films, due to the excellent thermal conductivity of diamond, which can effectively dissipate heat [254][255][256][257][258]. However, due to lattice mismatch, the quality of β-Ga 2 O 3 films grown by heteroepitaxy is often poor, limiting device performance [259][260][261].…”