Transient charging of MIS diodes prepared by Al overlayer induced plasma oxidation of InP

Abstract

Resistance of InP substrates to oxidation via plasma anodization can be suppressed by AI-coating of t h e substrates ( 6 4 nm) prior to the plasma treatment. In the temperature range 150-200 "C thicknesses of the InP native oxide up lo -50 nm could be achieved. Resulting MOS diodes were characterized by combined feedback charge capacitance and current OLTS measurements. For a zero applied bias, the Fermi level at the surface is unpinned and positioned about 0.1 eV below the conduction band minimum. The density of interface States rises steeply when approaching the conduction band edge, preventing the devices from reaching a true accumulation of electrons at the InP/oxide interface.

n-La2Ti2O7/p-LaCrO3: a novel heterojunction based composite photocatalyst with enhanced photoactivity towards hydrogen production

“…In general, it is assumed that the Fermi level of a semiconductor lays just 0.1 eV below and above the conduction and valence band of a semiconductor. [34][35][36] The position of the conduction band, valence band and Fermi level of La 2 Ti 2 O 7 and LaCrO 3 is calculated by photoelectrochemical measurements taking Ag/AgCl as the reference electrode at pH 6. The band positions of La 2 Ti 2 O 7 and LaCrO…”

Heterojunction conception of n-La2Ti2O7/p-CuO in the limelight of photocatalytic formation of hydrogen under visible light

“…Generally, the Fermi level is assumed to be present 0.1 eV below and above the conduction and valence band, respectively of an n-and p-type catalyst. [47][48][49] From the PEC measurement, the positions of the conduction band, valence band and Fermi level are calculated for CuO and La 2 Ti 2 O 7 w.r.t. the Ag/AgCl electrode at pH 6.…”