Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD

Zhang, Lilong; Wang, Ying; Guo, Haomin; Yu, Cheng-Hao; Hu, Hesuan; Liu, Yuntao; Chen, Size

doi:10.1109/jsen.2022.3170570

Cited by 9 publications

(5 citation statements)

References 38 publications

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“…q is the element charge with a value of 1.6 × 10 −19 C, and ε is the average ionization energy of SiC material with a value of 7.78 eV [26,29]. The ionization distribution of alpha particles with various energies and their final , we observe that the ions deposition range is increased with an increase of alpha particle energy.…”

Section: Device Modelling and Simulationmentioning

confidence: 82%

“…The number of ionizationgenerated electron-hole pairs is obtained by the LCD. Here, the relationship between the LCD and ionization distribution is following [26]:…”

Section: Device Modelling and Simulationmentioning

confidence: 99%

“…Most research reports on the energy resolution and efficiency of 4H-SiC SBDs for α particle detection have been reported [17][18][19][20][21]. In additional, time response characteristics of the detector is crucial for monitoring the characteristics of radiation fields varied with time and obtaining the diagnosis of pulse radiation field characterization [22][23][24][25][26]. However, there is a lack of systematic visualized research reports on transient behaviors of carriers and α particles to analyze time response characteristics of 4H-SiC SBDs.…”

Section: Introductionmentioning

confidence: 99%

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Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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Time response characteristics of α particle detector is crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carrier and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.

show abstract

Section: Device Modelling and Simulationmentioning

confidence: 82%

“…The number of ionizationgenerated electron-hole pairs is obtained by the LCD. Here, the relationship between the LCD and ionization distribution is following [26]:…”

Section: Device Modelling and Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

He,

Cao,

et al. 2024

Phys. Scr.

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“…In this work, the mechanisms concerning the electrical performance degradation of a GaN alpha-particle detector were systematically studied. We calculated the linear energy transfer (LET) and non-ionizing energy loss (NIEL) of incident alpha particles and recoil nuclei using the Monte Carlo program the Stopping and Range of Ions in Matter (SRIM) [24][25][26][27]. Subsequently, we established a technology computer-aided design (TCAD) device model, which was validated by applying the experimental data acquired from a fabricated GaN alpha-particle detector.…”

Section: Introductionmentioning

confidence: 99%

Simulation-Based Analysis of the Effect of Alpha Irradiation on GaN Particle Detectors

Lei,

Wang,

Jiang

et al. 2023

Micromachines

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Radiation-hardened semiconductor GaN has drawn considerable attention owing to its excellent properties such as large displacement energy. Many studies have focused on evaluating the degradation of GaN-based power device performance by proton beam or particle irradiation, while quantitative analysis of the energy transfer process of particles inside the material and the mechanisms involved in inducing degradation of electrical properties are rare. Here, on the basis of the fabricated alpha-particle detector, a device model validated by basic electrical experiments is established to simulate the influence of alpha-particle irradiation on the leakage current of the device. We observe that the current does not change significantly with increasing radiation fluence at low bias, while it shows a descending trend with increasing radiation fluence at higher bias. However, increasing the energy of the radiation particles at the same radiation fluence directly leads to a monotonically elevated leakage current. Such a series of phenomena is associated with radiation-induced changes in the density of trapped states within the active layers of the device.

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“…SiC material has high band-gap and high thermal conductivity, therefore, SiC neutron detectors can be applied to extreme environments with high temperature and strong radiation. The trench-type neutron detector has high detection efficiency, thus it is frequently selected [1]. It is a positive-intrinsic negative(PIN) diode operated with reverse bias (see Fig1).Weak signals from the detector output often require multi-stage amplifiers to achieve desired amplification.…”

mentioning

confidence: 99%

A low-noise, radiation-hardened charge-sensitive amplifier for Silicon carbide neutron detector

Liu,

Fang

et al. 2024

J. Phys.: Conf. Ser.

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Silicon carbide(SiC) neutron detectors can be applied to extreme environments with high temperature and strong radiation. The total noise factor is most significantly influenced by the noise factor of the first stage in a cascade amplifier. Hence, the preamplifier must exhibit exceptional noise performance. The readout circuit is inevitably exposed to the influence of radiation, which may result in temporary or even permanent failure of electronic systems. The connection method between the SiC neutron detector and the readout circuit is typically DC-coupled. When the sensor is working, the leakage current generated by the sensor will enter the input end of the CSA and change the baseline position of the CSA. In this paper, a low-noise CSA with leakage current compensation circuit(LCC) is presented. The circuit’s voltage-to-charge amplification is 2.98mV/fC, and the error due to nonlinearity is below 0.01%. Without considering the input parasitic capacitance, ENC is 43.12e-. In addition, the circuit also has good radiation resistance and leakage current compensation function. It is implemented and simulated in the DB Hitek 0.18μm CMOS process model.

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Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD

Cited by 9 publications

References 38 publications

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Transient behaviour analysis in silicon carbide alpha particle detector using TCAD and SRIM simulation

Simulation-Based Analysis of the Effect of Alpha Irradiation on GaN Particle Detectors

A low-noise, radiation-hardened charge-sensitive amplifier for Silicon carbide neutron detector

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