Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model

Guetarni, K.; Touboul, Antoine; Boch, J.; Foro, L.; Privat, A.; Michez, A.; Vaillé, J.-R.; Saigné, Frédéric

doi:10.1016/j.microrel.2013.07.108

Cited by 13 publications

(2 citation statements)

References 30 publications

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“…Therefore, quite early, device simulators have been put to use to model charge multiplication following the introduction of burst of charge into MOSFETs [29] and IGBTs [30][31][32]. Many of these models defined the occurrence of device failure as the triggering of device-internal bipolar transistors and latches.…”

Section: Device Simulation Of Charge Multiplicationmentioning

confidence: 99%

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Soelkner

2016

Microelectronics Reliability

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Section: Device Simulation Of Charge Multiplicationmentioning

confidence: 99%

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Soelkner

2016

Microelectronics Reliability

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“…Then two types of numerical tools are used to simulate the crossing of an ionizing particle in a device, each of them corresponding to a scale of the circuit The first one, the TCAD simulation (as Sentaurus [1]), relies on a quantitative multi physics approach, at the scale of the lowest length in the electronic device. The particle is generated as an electron-hole distribution in the device simulated at a physical level and the transient current is generated at the electrodes by solving the transport equation in the semi-conductor volume [2,3,4]. If well calibrated, TCAD simulation is a realistic method for single events studies but it is time consuming, and generally needs high CPU resources because based on a multi-physics finite elements approach.…”

Section: Introductionmentioning

confidence: 99%

SITARe: a fast simulation tool for the analysis of disruptive effects on electronics

et al. 2019

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This paper is devoted to an exhaustive presentation of a fast computation numerical tool, dedicated to the simulation of transient currents induced by stochastic events in microelectronic devices. This is a part of a numerical platform, SITARe, combining a spice simulator with the semi-analytical model presented here. The paper describes the theoretical model, the calibration. An instance of application illustrates the ability of the tool.

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Optimization of a Particles Detection Chain Based on a VCO Structure

et al. 2016

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International audienceAn analysis and optimization of an oscillator based detection chain, dedicated to the conditioning of low input signals, is presented in this paper. The concept is based on an indirect detection of the current generated at the input of the detection chain, through a Voltage Controlled Oscillator (VCO) response. In order to improve the correlation between the input current and the oscillator response (signal recognition), the full characterization of the VCO is presented. The solution enhances the particle recognition with a simple analysis of the VCO output. The new output parameter variations are analyzed and the system resolution is explored

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Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model

Cited by 13 publications

References 30 publications

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

SITARe: a fast simulation tool for the analysis of disruptive effects on electronics

Optimization of a Particles Detection Chain Based on a VCO Structure

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