Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer 
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Nathawat, J.; Smithe, Kirby K. H.; English, Chris; Yin, Shenchu; Dixit, R.; Randle, Michael; Arabchigavkani, Nargess; Barut, Bilal; He, Kang; Pop, Eric; Bird, J. P.

doi:10.1103/physrevmaterials.4.014002

Cited by 17 publications

(17 citation statements)

References 34 publications

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“…The v SAT values are significantly lower compared to bulk Si with v SAT ≈ 10 7 cm.s −1 67 , 68 . Nathawat et al have reported higher v SAT ≈ 6 × 10 6 cm.s −1 in CVD grown monolayer MoS 2 69 . However, their measurements were done using nanosecond range pulses to reduce the impact of self-heating and hot carrier capture by deep oxide traps.…”

Section: Resultsmentioning

confidence: 96%

Benchmarking monolayer MoS2 and WS2 field-effect transistors

et al. 2021

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Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1 × 1 cm2 chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33 cm2 V−1 s−1 in WS2 FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.

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Section: Resultsmentioning

confidence: 96%

Benchmarking monolayer MoS2 and WS2 field-effect transistors

et al. 2021

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“…The advent of nanoscale transistors and power electronics has made high electric fields widespread in modern devices [1][2][3][4][5][6]. As a result, accurate modeling of high-field electrical transport is broadly relevant for various technologies.…”

Section: Introductionmentioning

confidence: 99%

“…Studies of velocity-field curves date back to the early days of semiconductors [9][10][11][12][13]. These measurements are now routine, with possible challenges due to sample self-heating [2] or spurious substrate effects [7]. Theory and computation can aid the interpretation of transport experiments and shed light on the mechanisms limiting the mobility and saturation velocity.…”

Section: Introductionmentioning

confidence: 99%

Ab initio electron dynamics in high electric fields: Accurate prediction of velocity-field curves

2021

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Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. Firstprinciples calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. Here, we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investigate both transient and steady-state transport in electric fields ranging from low to high (>10 kV/cm). The broad capabilities of our approach are shown by computing nonequilibrium electron occupations and velocity-field curves in Si, GaAs, and graphene, obtaining results in quantitative agreement with experiment. Our approach sheds light on microscopic details of transport in high electric fields, including the dominant scattering mechanisms and valley occupation dynamics. Our results demonstrate quantitatively accurate calculations of electron dynamics in low to high electric fields, with broad application to power and micro-electronics, optoelectronics, and sensing.

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“…Indeed, the effect of Joule heating on the operating temperature, which occurs while the device is operating, cannot be ignored. [ 15,30,31 ] When the device repeatedly turns on/off under the low temperature, the operating temperature changes rapidly.…”

Section: Introductionmentioning

confidence: 99%

Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

Kim

Kaczer

Verreck

et al. 2021

Adv Elect Materials

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Field‐effect transistors (FETs), using transition metal dichalcogenides (TMD) as channels, have various types of interfaces, and their characteristics are sensitively changed in temperature and electrical stress. In this article, the effect of fast cyclic thermal stress on the performance of FETs using TMD as a channel is investigated and introduced. The Al2O3 passivation layer is deposited onto the TMD channel by atomic layer deposition process, and the hysteresis decreases and the direction changes from clockwise to counterclockwise. Applying cyclic thermal stress that rapidly heats and cools by 90 K in a 20 s cycle increases and decreases drain current repeatedly as charges move between the TMD channel and the interface traps. As cyclic thermal stress is applied, permanent interfacial damage occurs, resulting in increased interface trap density at the bottom and decreased hysteresis. These experimental results are also shown through technology computer‐aided design simulations. In addition, series resistance and mobility attenuation factor increase due to the concentration of the conduction paths at the bottom of the channel.

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Transient hot-carrier dynamics and intrinsic velocity saturation in monolayer MoS2

Cited by 17 publications

References 34 publications

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Ab initio electron dynamics in high electric fields: Accurate prediction of velocity-field curves

Cyclic Thermal Effects on Devices of Two‐Dimensional Layered Semiconducting Materials

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