Transient lateral photovoltaic effect in p-n heterojunctions of La0.7Sr0.3MnO3 and Si

Zhao, Kun; Jin, Kui-juan; Lü, Huibin; Huang, Yuzhen; Zhou, Qingli; He, Meng; Chen, Zhenghao; Zhou, Yueliang; Yang, Ge

doi:10.1063/1.2193436

Cited by 92 publications

(63 citation statements)

References 17 publications

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“…In addition, there are reports of the photoelectric effect observed on heterojunctions of doped magnanites and doped silicon 24,25 and on a heterostructure 26 of Y Ba 2 Cu 3 O 7−x on Nb doped SrT iO 3 . Here, we demonstrate that in the case of narrow-gap Mott insulators the photovoltaic effect can lead to solar cells of high quantum efficiency, where a single solar photon can produce multiple electron-hole pairs.…”

Section: Introductionmentioning

confidence: 99%

Photovoltaic effect for narrow-gap Mott insulators

Manousakis

2010

Phys. Rev. B

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We discuss the photovoltaic effect at a p-n heterojunction, in which the illuminated side is a doped Mott insulator, using the simplest description of a Mott insulator within the Hubbard model. We find that the internal quantum efficiency of such a device, if we choose an appropriate narrow-gap Mott insulator, can be significantly enhanced due to impact ionization caused by the photoexcited "hot" electron-hole pairs. Namely, the photoexcited electron and/or hole can convert its excess energy beyond the Mott-Hubbard gap to additional electrical energy by creating multiple electron-hole pairs in a time scale which can be shorter than the time characterizing other relaxation processes.

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Section: Introductionmentioning

confidence: 99%

Photovoltaic effect for narrow-gap Mott insulators

Manousakis

2010

Phys. Rev. B

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“…4, the most important feature of planar LPE devices. [1][2][3][4] This behavior is independent of the contact configuration with respect to the ground. It is worth noting that the T-LPE amplitude and shows a non-zero value when spot is centered exactly between the electrodes.…”

Section: T(ps)mentioning

confidence: 79%

“…This potential difference is known as the lateral photovoltaic effect (LPE). [1][2][3][4] Since a few decades, the LPE has been reported in wide classes of systems ranging from organic semiconductors, 5 Ti/Si amorphous superlattices, 6 semiconductor heterostructures, 7 including two-dimensional electron systems (2DES). 8 On the practical side, the LPE has been widely used to develop high precision position-sensitive detectors (PSD).…”

Section: Introductionmentioning

confidence: 99%

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Martínez

Cascales²,

Lara

et al. 2015

SPIE Proceedings

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The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics.

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“…In the past few years, we have investigated the photoelectric effects under laser pulses in a variety of oxide heterostructures Zhao et al, 2005;Zhao et al, 2006a;Zhao et al, 2006b;Zhao et al, 2006c;Huang et al, 2006;Wen et al, 2009). It was found that the photoelectrical process is in a picosecond or nanosecond order in the oxide heterostructures, which opens up a door for the applications of oxide heterostructures in the optoelectronic detection devices.…”

Section: Transient Photoelectric Effectsmentioning

confidence: 99%