Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study

Abstract

The response to single-event of 3-D Multi-Channel nanowire MOSFETs is investigated by 3-D numerical simulation. Drain current transient and charge collection are analyzed as function of the ion strike location, direction and track radius.

Impact of increasing the fin height on soft error rate and static noise margin in a FinFET-based SRAM cell

“…In [3] and [4] 3-D TCAD simulations were employed to model the response to radiation of FinFETs. In addition, Munteanu et al [5] demonstrated that 3T-FinFET and 3T-Multi-channel nanowires have better radiation hardness than conventional fullydepleted single-gate SOI transistors. In [6], alpha-particle and cosmic ray induced SER benefits of 22 nm high-K and metalgate bulk Tri-Gate devices have been measured and compared against equivalent devices manufactured in a 32 nm planar bulk CMOS technology.…”