Transient Sensitivity of Sectorial Split-Drain Magnetic Field-Effect Transistor

Yang, Zhenyi; Siu, Sik-Lam; Tam, Wing-Shan; Kok, Chi-Wah; Leung, Chi Wah; Lai, Peilong; Wong, Hei; Pong, Wing-Tat

doi:10.1109/tmag.2013.2241034

Cited by 8 publications

(1 citation statement)

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“…Split-drain magnetic field-effect transistor (SD-MAGFET) has been widely used as magnetic field sensors, current sensors and temperature-stable arrays due to its small size and CMOS compatibility [1]- [2] [3]. Previous work suggested that its sensitivity hysteresis could be caused by the Si/SiO2 interface traps at the sidewalls of the conduction channel [4]. However, the effects of these interface traps on the magnetic sensitivity have not been studied in detail.…”

Section: Introductionmentioning

confidence: 99%

A numerical investigation on effects of lateral Si/SiO2 interface traps on magnetic sensitivity of sectorial SD-MAGFET

Yang

Leung

Lai

et al. 2016

2016 5th International Symposium on Next-Generation Electronics (ISNE)

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Split-drain magnetic field-effect transistor (SD-MAGFET) has been widely used as magnetic field sensors, current sensors and temperature-stable arrays due to its small size and CMOS compatibility [1]-[2][3]. Previous work suggested that its sensitivity hysteresis could be caused by the Si/SiO2 interface traps at the sidewalls of the conduction channel [4]. However, the effects of these interface traps on the magnetic sensitivity have not been studied in detail. In this work, the effects of trap type, trap density and trap energy are investigated by Silvaco TCAD.

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