Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Jones, Jason P.; Heller, Eric R.; Dorsey, Donald L.; Graham, Samuel

doi:10.1016/j.microrel.2015.08.019

Cited by 37 publications

(8 citation statements)

References 41 publications

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“…All the interfaces between the diode and external surroundings are set to be adiabatic boundary conditions. In order to simplify the algorithm and solve the non-convergence problem, the heat transport from the metal contact to external surroundings is not included in our simulations, a common practice in the simulation of thermal effect as described in [21][22][23]. The LAT.TEMP lattice temperature model is added to the MODELS statement to include heat flow.…”

Section: Methods Of Analysis and Physical Modelsmentioning

confidence: 99%

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Wang

Liu

2018

Applied Sciences

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In this paper, a comprehensive evaluation of thermal behavior of the GaN vertical n+-n−-n-n+ Gunn diode have been carried out through simulation method. We explore the complex effects of various parameters on the device thermal performance through a microscopic analysis of electron movements. These parameters include operation bias, doping level, and length of the active region. The increase of these parameters aggravates the self-heating effect and degrades the electron domains, which therefore reduces the overall performance output of the diode. However, appropriate increase of the doping level of active region makes the lattice heat distribute more uniformly and improves the device performance. For the first time, we propose the transition domain, which is in between the dipole domain and accumulation layer, and stands for the degradation of the electron domain. We have also demonstrated that dual domains occur in the device with longer active region length and higher doping level under EB (Energy balance) model, which enhances the harmonics component. Electric and thermal behaviors analysis of GaN vertical Gunn diode makes it possible to optimize the device.

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Section: Methods Of Analysis and Physical Modelsmentioning

confidence: 99%

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Wang

Liu

2018

Applied Sciences

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“…To estimate the reliability of the component, many authors have studied the effect of the electrical characteristics on its structural performance [28,29]. However, the thermal behavior also has a great impact on the HEMT's reliability, by different degradation forms such as gate burial, degradation of the feed metals interconnection and degradation of the Schottky contact [4].…”

Section: Evaluation Of the Hemt Reliabilitymentioning

confidence: 99%

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

2021

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The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.

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“…(ii) The heat transport from metal contacts to external surroundings is ignored to simplify the calculation and avoid the non-convergence problem. This is a common practice in the simulation of thermal effect as described in [25]- [27]. (iii) The ambient temperature is 300 K. (iv) To model both radiation energy loss and heat loss in the substrate, the thermal resistance R th for different substrates is defined (R th-diamond = 1.23 × 10 −8 m 2 K/W, R th-SiC = 3.13 × 10 −8 m 2 K/W, R th-Si = 4.69 × 10 −8 m 2 K/W, R th-sapphire = 18.78 × 10 −8 m 2 K/W) [28]- [30].…”

Section: Simulation Detailsmentioning

confidence: 99%

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

Wang

et al. 2020

IEEE J. Electron Devices Soc.

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GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration. However, high lateral current in the 2DEG channel may lead to failures such as early breakdown and suppression of oscillations. In this paper, we will, for the first time, systematically investigate the thermal effect on DC IV and output RF characteristics of AlGaN/GaN hetero-structural planar Gunn diodes on different substrates including diamond, SiC, Si and sapphire. Our simulation results show that the best RF output performance comes with the devices on diamond substrate and no oscillating current is observed for devices on sapphire substrate. The suppress of Gunn oscillation in the device on sapphire is mainly due to the excessive heat generated in the channel that leads to increase of the dead zone and attenuation of electronic domains. These results will lay theoretical and experimental foundation for realizing not only milliwatt GaN-based terahertz semiconductor oscillators but also other power devices. INDEX TERMS Wide band gap semiconductors, numerical simulation, terahertz Gunn diode, thermal effect.

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Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Cited by 37 publications

References 41 publications

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Thermal Modeling of the GaN-based Gunn Diode at Terahertz Frequencies

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation

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