2000
DOI: 10.1016/s0022-3093(99)00727-9
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Transient thermal gratings and carrier-induced gratings in diffusion experiments

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Cited by 4 publications
(3 citation statements)
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“…Moreover, this signal shows itself reversible under increase and decrease of the incident power, without damage of the film. When the film was excited at intensities ranging from 2.2 kW/cm 2 to about 22 kW/cm 2 the carrier generation increased [12]. At the same time, because of the incident intensity, the temperature of the film increases and reaches the annealing limit for defects created by illumination.…”
Section: Discussionmentioning
confidence: 99%
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“…Moreover, this signal shows itself reversible under increase and decrease of the incident power, without damage of the film. When the film was excited at intensities ranging from 2.2 kW/cm 2 to about 22 kW/cm 2 the carrier generation increased [12]. At the same time, because of the incident intensity, the temperature of the film increases and reaches the annealing limit for defects created by illumination.…”
Section: Discussionmentioning
confidence: 99%
“…2 can be explained as follows. For the crystalline and amorphous silicon films, the refractive index change under illumination can be described as [12]:…”
Section: Discussionmentioning
confidence: 99%
“…This phenomenon is similar to ambipolar diffusion of the thermoelectric effect, in which the electrons and holes move at the same rate. 8,9) Because thermally treating the loop device in air can reproduce the original time response curves, it is likely that oxygen plays an important role. Oxygen reacts with hydrogen to form water molecules in the thermal treatment in the air atmosphere (Fig.…”
mentioning
confidence: 99%