Transient thermal process after a high-energy heavy-ion irradiation of amorphous metals and semiconductors

Toulemonde, M.; Dufour, Christian; Paumier, E.

doi:10.1103/physrevb.46.14362

Cited by 653 publications

(289 citation statements)

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“…Most theoretical analyses of the amorphization cross-section are based on the thermal spike approach [17,19]. However, the significant contribution of the halo in the near-threshold region strongly suggests that one should invoke cumulative models that are consistent with the dual core/ halo morphology of the tracks.…”

Section: Physical Implications On the Structure And Mechanisms Of Shimentioning

confidence: 99%

“…It has been widely documented that the impacts of swift heavy ions (where the electronic stopping regime dominates) on several dielectric targets generate individual tracks along the trajectory, whenever a certain threshold stopping power is overcome [14][15][16]. These observations are often explained through a thermal spike approach involving lattice melting and re-solidification of the heated material around the ion trajectory [17,18]. More recently, a different theoretical scheme has been developed for some crystals (e.g., LiNb0 3 ) in which the damage process, including track formation, is analyzed as a cumulative process that occurs via formation of point defects.…”

Section: Introductionmentioning

confidence: 99%

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Kinetics of amorphization induced by swift heavy ions in α-quartz

Peña‐Rodríguez

Manzano-Santamaría

Rivera

et al. 2012

Journal of Nuclear Materials

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The kinetics of amorphization in crystalline Si0 2 (oi-quartz) under irradiation with swift heavy ions (0 +1 at 4 MeV, 0 +4 at 13 MeV, F +2 at 5 MeV, F +4 at 15 MeV, Cl +3 at 10 MeV, CI* 4 at 20 MeV, Br +5 at 15 and 25 MeV and Br +8 at 40 MeV) has been analyzed in this work with an Avrami-type law and also with a recently developed cumulative approach (track-overlap model). This latter model assumes a track morphology consisting of an amorphous core (area

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Section: Physical Implications On the Structure And Mechanisms Of Shimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Kinetics of amorphization induced by swift heavy ions in α-quartz

Peña‐Rodríguez

Manzano-Santamaría

Rivera

et al. 2012

Journal of Nuclear Materials

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“…The later stages of ion track formation, after the initial electronic excitation, are well described by a thermal spike mechanism. 1,2 Within this formalism, the materialspecific electron-phonon coupling governs the transfer of the deposited energy to the target atoms, which induces a local increase in the lattice temperature. For sufficiently high electronic energy deposition, the melting temperature of the substrate can be exceeded, and a molten zone is formed along the ion trajectory.…”

Section: Introductionmentioning

confidence: 99%

Latent ion tracks in amorphous silicon

et al. 2013

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We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

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“…The first included the excitation of electrons due to the ion energy deposition. The electron dynamics were then followed by combining a MC approach [15] and TTM [16][17][18]. While the MC method is a kinetic means of modeling the initial electron excitation and the nonequilibrium electron dynamics, the TTM describes the energy transport within the electronic and lattice subsystems.…”

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confidence: 99%

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

et al. 2013

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Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification. DOI: 10.1103/PhysRevLett.110.245502 PACS numbers: 61.80.Jh, 61.43.Dq, 61.43.Bn, 61.05.cf Swift heavy-ion irradiation (SHII) has many applications, spanning geochronological dating [1] to nanostructure fabrication [2]. Though this approach has found industrial application [3], the fundamental nature of ionsolid interactions at very high ion energies remains poorly understood. Such interactions are dominated by inelastic processes (electronic stopping) resulting in the excitation and ionization of substrate atoms while, in contrast, the elastic processes (nuclear stopping) that lead to ballistic atomic displacements at much lower energies are negligible in the SHII regime. The efficiency with which energy deposited in the electronic subsystem is subsequently transferred to the lattice is governed by the electronphonon coupling parameter g where typically g amorphous > g crystalline due to a reduced electron mean free path in the former. When the lattice temperature exceeds that required for melting, a narrow cylinder of molten material is formed along the ion path. The ensuing rapid resolidification of this transient liquid phase can yield remnant structural modifications within the substrate in the form of an ion track.Crystalline Ge (c-Ge) is relatively insensitive to SHII such that ion-track production necessitates very high electronic stopping S e values. Discontinuous tracks follow single-ion irradiation (S e ¼ 35 keV=nm) [4,5] while cluster-ion irradiation (S e ¼ 37-51 keV=nm) yields tracks of diameter 5-15 nm [5]. In contrast, amorphous Ge (a-Ge) is rendered porous under SHII with S e > $10 keV=nm [6] while ion hammering results for S e > $12 keV=nm [6], the latter manifested as a nonzero deformation yield [7]. These observations are consistent with g amorphous > g crystalline and ion-track formation has been suggested as the origin of these two phenomena [6,7]. A recent molecular dynamics (MD) study of irradiated a-Ge [8] suggested voids originate from outgoing shock waves resulting from rapid heating and expansion of the ion-track core. The sole report of ion tracks in a-Ge is that of Furuno et al. [9] who reported recrystallization of tracks in a 5-nm a-Ge layer following SHII in a grazing-incidence orientation, a geometry that can lead to significant reductions in threshold S e values for ion-track formation [10]. The proximity of the surface could also perturb resolidification and enable recrystallization given the molten i...

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Transient thermal process after a high-energy heavy-ion irradiation of amorphous metals and semiconductors

Cited by 653 publications

References 71 publications

Kinetics of amorphization induced by swift heavy ions in α-quartz

Kinetics of amorphization induced by swift heavy ions in α-quartz

Latent ion tracks in amorphous silicon

Tracks and Voids in Amorphous Ge Induced by Swift Heavy-Ion Irradiation

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