Transimpedance Amplifier for Noise Measurements in Low-Resistance IR Photodetectors

Heterojunctions formed between undoped and Eu‐doped NiO nanofibers (NFs) and n‐Si were fabricated by electrospinning the NiO:Eu NFs onto Si. Since the photoresponse of the Eu‐doped NiO‐containing device was better than the undoped one, the study focused on the doped NiO‐containing device. This was explained by the increase in electron kinetics in terms of the active role of Eu in bonding with the 4f orbitals and the s, d, and f states of NiO. Electro‐optical measurements of the NiO:Eu NFs/n‐Si heterojunction were performed in the visible region depending on the light intensity and in the UV and NIR regions for 10 mW/cm2 powers. It was observed that the device exhibits a good level of rectification properties and responds very well to all lights. At all three light sources, the heterojunction photodetector exhibited self‐powered behavior. Furthermore, for 10 mW/cm2 light intensity, the NiO:Eu NFs/n‐Si photodetector achieved R values of 1.84 A/W at 365 nm, 0.98 A/W at 395 nm, and 1.54 A/W at 850 nm, while it is 0.12 A/W for visible light. Besides, the device showed an external quantum efficiency of 625% and this was attributed to the photocurrent gain. In self‐driven mode, D* values have been determined as 3.0 × 1012 Jones, 2.6 × 1012 Jones, and 2.9 × 1012 Jones for 365, 395, and 850 nm, respectively. The performance of NiO under UV light was attributed to the absorption of NiO under UV light, as well as the very good excitation of (Eu3+) ions by UV light.

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Advanced, Real-Time Programmable FPGA-Based Digital Filtering Unit for IR Detection Modules

Achtenberg,

Szplet,

Bielecki

2024

Electronics

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This paper presents a programmable digital filtering unit dedicated to operating with signals from infrared (IR) detection modules. The designed device is quite useful for increasing the signal-to-noise ratio due to the reduction in noise and interference from detector–amplifier circuits or external radiation sources. Moreover, the developed device is flexible due to the possibility of programming the desired filter types and their responses. In the circuit, an advanced field-programmable gate array FPGA chip was used to ensure an adequate number of resources that are necessary to implement an effective filtration process. The proposed circuity was assisted by a 32-bit microcontroller to perform controlling functions and could operate at frequency sampling of up to 40 MSa/s with 16-bit resolution. In addition, in our application, the sampling frequency decimation enabled obtaining relatively narrow passband characteristics also in the low frequency range. The filtered signal was available in real time at the digital-to-analog converter output. In the paper, we showed results of simulations and real measurements of filters implementation in the FPGA device. Moreover, we also presented a practical application of the proposed circuit in cooperation with an InAsSb mid-IR detector module, where its self-noise was effectively reduced. The presented device can be regarded as an attractive alternative to the lock-in technique, artificial intelligence algorithms, or wavelet transform in applications where their use is impossible or problematic. Comparing the presented device with the previous proposal, a higher signal-to-noise ratio improvement and wider bandwidth of operation were obtained.

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Transimpedance Amplifier for Noise Measurements in Low-Resistance IR Photodetectors

Cited by 3 publications

References 28 publications

GaAs Operational Amplifier without Current Mirrors with Offset Voltage’s Systematic Component Compensation Circuit

GaAs Operational Amplifier without Current Mirrors with Offset Voltage’s Systematic Component Compensation Circuit

Fabrication and characteristics study of self‐powered and UV–Vis–NIR photodetector based on p‐NiO:Eu nanofibers

Advanced, Real-Time Programmable FPGA-Based Digital Filtering Unit for IR Detection Modules

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