2005
DOI: 10.1109/tnano.2005.851280
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Transistor Effects and In Situ STM of Redox Molecules at Room Temperature

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Cited by 44 publications
(69 citation statements)
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“…Albrecht et al [13,[15][16][17] ET > 10 6 s −1 and feature electrochemical STM enhancement with a maximum above the off resonance tunneling current and a peak potential that depends on the electrochemical overpotential, η = E S − E 0 ′ and tip-substrate bias, E bias , with a width of 200-300 mV from confined space in the nano-gap between substrate and tip. Also, a systematic linear variation of peak potential in the tunneling current over potential curve with E bias has been observed [35].…”
Section: Et In Electrochemical Experimentsmentioning
confidence: 99%
See 1 more Smart Citation
“…Albrecht et al [13,[15][16][17] ET > 10 6 s −1 and feature electrochemical STM enhancement with a maximum above the off resonance tunneling current and a peak potential that depends on the electrochemical overpotential, η = E S − E 0 ′ and tip-substrate bias, E bias , with a width of 200-300 mV from confined space in the nano-gap between substrate and tip. Also, a systematic linear variation of peak potential in the tunneling current over potential curve with E bias has been observed [35].…”
Section: Et In Electrochemical Experimentsmentioning
confidence: 99%
“…In situ electrochemical metal/molecule/metal scanning tunneling spectroscopy (EC-STS) of redox active molecules has been reported by the groups of Ulstrup [13][14][15][16][17] …”
Section: Introductionmentioning
confidence: 99%
“…In the electrochemical scanning tunneling spectroscopy configuration (i.e., STM tip not chemically attached to the molecule) there is now a collection of examples displaying a clear maximum in their tunneling current (I tunneling ) vs electrochemical potential relations. 13,15,[23][24][25][26][27]29,39 These have been well-modeled in terms of the KU relationship for two-step electron/hole transfer through the redox center in the STM−substrate gap. The situation is far from clear for measurements made in the in situ electrochemically gated BJ configuration (i.e., when the electrochemically active bridge molecule is chemically attached at one end to the STM tip and at the other end to the substrate).…”
Section: ■ Introductionmentioning
confidence: 99%
“…Here, the electrochemical gating of the charge transport through a surface-bound PTM radical has been explored using an electrochemical scanning tunnelling spectroscopy (EC-STS) technique. We demonstrated current enhancement due to the redox-mediated electron tunnelling (RMET) mechanism [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] involving the PTM radical as the active redox-centre. Our results show that, in comparison with other redox-active moieties, the PTM radical is among the most efficient redox mediators in RMET, demonstrating its applicability as an active electronic component in electronic devices of nanoscale size.…”
mentioning
confidence: 99%