Transistor Power Switches

Pollefliet, Jean

doi:10.1016/b978-0-12-814643-9.50003-9

Cited by 2 publications

(2 citation statements)

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“…According to transistor theory, the breakdown behavior of a conventional junction can be observed at approximately 150°C [38]. With the use of the thermal model and the measured breakdown photocurrent, we confirmed that the breakdown temperature of Sample 1 was 431 K (~158°C), similar to the breakdown temperature from the transistor theory.…”

Section: B Thermal Analysessupporting

confidence: 79%

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Yi,

Umezawa,

Akahane

et al. 2024

IEEE Access

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We reported a thermal investigation on a photodetector (PD) with a sandwiched structure comprising p-type, intrinsic, and n-type (PIN-PD) layers based on Williams' thermal model. Simulations and measurements of the photocurrent in the linear region, 3-dB bandwidth and thermal analyses were conducted. We found a good agreement between the measured photocurrent and simulations. The measured linear photocurrent of PIN-PD with 50 μm substrate and 0.4 μm absorber was 28 mA at -2 V, which was related to the expected RF output power of +13 dBm at 50 GHz. In addition, thermal analyses evaluated the junction temperature corresponding to the specific measured photocurrent, as well as the 431 K for junction breakdown temperature of the fabricated PD samples. This evaluation further predicted that this type of PIN-PD would reach the thermal breakdown point when the photocurrent was 34 mA at -2 V. Furthermore, with the application of AlN flip-chip bonding, the linear and expected maximum photocurrent were improved to 30 mA and 45 mA, respectively. Finally, we predicted the PD temperature and maximum photocurrent of 55 mA using AlN instead of InP as the main substrate.INDEX TERMS breakdown prediction, high linear photocurrent, PIN-PD, thermal analyses

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Section: B Thermal Analysessupporting

confidence: 79%

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Yi,

Umezawa,

Akahane

et al. 2024

IEEE Access

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“…To address this issue, FASTHIGH transfers energy to an inductor to reserve energy, as shown in Figure 9b [27]. The energy is conserved effectively by the inductor, following which switching mode power supply [28] working theories are used to decrease the voltage and increase the charging current, as depicted in Figure 10a. The red arrow line is the current flow direction [29] when switching on and off, as depicted in Figure 10b,c.…”

Section: Methods and Theoriesmentioning

confidence: 99%

Enhanced charge circuitry for indoor photovoltaic energy harvesting with fast activation and high efficiency

Wang

Huang

2023

IET Power Electronics

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Using batteries in low‐power Internet of Things (IoT) devices poses a risk of environmental pollution. Energy harvesting (EH) systems are needed to capture ambient energy and charge supercapacitors to address this issue. Indoor photovoltaic (PV) panels are a promising power source, but their weak ambient energy makes it challenging to activate IoT end nodes quickly. Here, an EH system enhanced charge circuitry with fast activation is proposed that reduces IoT end nodes activation time to less than 2 s, compared to the traditional 19.8 h, if an indoor PV panel supplying 28 µA to charge a 1 F capacity supercapacitor from 0 to 2 V. This system also offers high‐efficiency charging, enabling supercapacitors to replace batteries, particularly when charging from 0 to 1.2 V, with a charge time improvement ratio of 64%. These breakthroughs address long‐standing challenges in IoT power systems and reduce environmental pollution.

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Transistor Power Switches

Cited by 2 publications

References 0 publications

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Thermal Study for High-Photocurrent Photodetector in Non-Saturation Region Using Thin Substrate, Thin Absorber, and Flip- Chip Bonding Process

Enhanced charge circuitry for indoor photovoltaic energy harvesting with fast activation and high efficiency

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