Transition behaviors in biased asymmetric quantum dot-in-double-well photodetector

Shin, Hyun Wook; Choe, J. W.; Lee, S.J.; Noh, Sam Kyu; Kim, J.O.; Lee, K.-S.

doi:10.1016/j.cap.2014.02.019

Current Applied Physics

2014

DOI: 10.1016/j.cap.2014.02.019

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Transition behaviors in biased asymmetric quantum dot-in-double-well photodetector

Hyun Wook Shin

J. W. Choe

S.J. Lee

et al.

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Cited by 3 publications

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“…This enhancement of the diffusivity is a direct consequence of a reduction of the migration‐energy barriers across that strain regime (Figure S8c, Supporting Information). We note that the exact computation of diffusivity in LSGM is not a trivial matter and requires mesoscopic modeling approaches; this said, the DFT results support the trends of the experimental findings wherein a larger unit‐cell volume enables enhanced ionic conduction, consistent with prior works on ion‐conducting materials …”

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confidence: 86%

Designing Optimal Perovskite Structure for High Ionic Conduction

et al. 2019

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Solid‐oxide fuel/electrolyzer cells are limited by a dearth of electrolyte materials with low ohmic loss and an incomplete understanding of the structure–property relationships that would enable the rational design of better materials. Here, using epitaxial thin‐film growth, synchrotron radiation, impedance spectroscopy, and density‐functional theory, the impact of structural parameters (i.e., unit‐cell volume and octahedral rotations) on ionic conductivity is delineated in La0.9Sr0.1Ga0.95Mg0.05O3–δ. As compared to the zero‐strain state, compressive strain reduces the unit‐cell volume while maintaining large octahedral rotations, resulting in a strong reduction of ionic conductivity, while tensile strain increases the unit‐cell volume while quenching octahedral rotations, resulting in a negligible effect on the ionic conductivity. Calculations reveal that larger unit‐cell volumes and octahedral rotations decrease migration barriers and create low‐energy migration pathways, respectively. The desired combination of large unit‐cell volume and octahedral rotations is normally contraindicated, but through the creation of superlattice structures both expanded unit‐cell volume and large octahedral rotations are experimentally realized, which result in an enhancement of the ionic conductivity. All told, the potential to tune ionic conductivity with structure alone by a factor of ≈2.5 at around 600 °C is observed, which sheds new light on the rational design of ion‐conducting perovskite electrolytes.

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confidence: 86%

Designing Optimal Perovskite Structure for High Ionic Conduction

et al. 2019

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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Nedzinskas

Čechavičius

Rimkus

et al. 2015

Journal of Applied Physics

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We present a photoreflectance (PR) study of multi-layer InAs quantum dot (QD) photodetector structures, incorporating InGaAs overgrown layers and positioned asymmetrically within GaAs/AlAs quantum wells (QWs). The influence of the back-surface reflections on the QD PR spectra is explained and a temperature-dependent photomodulation mechanism is discussed. The optical interband transitions originating from the QD/QW ground-and excited-states are revealed and their temperature behaviour in the range of 3-300 K is established. In particular, we estimated the activation energy ($320 meV) of exciton thermal escape from QD to QW bound-states at high temperatures. Furthermore, from the obtained Varshni parameters, a strain-driven partial decomposition of the InGaAs cap layer is determined. V C 2015 AIP Publishing LLC.

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Effect of quantum dots on InAs/GaAs p-i-p quantum dots infrared photodetectors

Zhang

Guo

2017

Integrated Ferroelectrics

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Transition behaviors in biased asymmetric quantum dot-in-double-well photodetector

Cited by 3 publications

References 23 publications

Designing Optimal Perovskite Structure for High Ionic Conduction

Designing Optimal Perovskite Structure for High Ionic Conduction

Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors

Effect of quantum dots on InAs/GaAs p-i-p quantum dots infrared photodetectors

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