Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor

Huang, Yong; Yu, Jie; Yu, Ke; Wang, Xiaoqiu

doi:10.1039/d2ra05483c

Cited by 3 publications

(2 citation statements)

References 27 publications

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“…10,13,14 In such sophisticated bionic electronic systems, RRAM is still crucial to achieving low energy consumption, high computing power, and ultrahigh storage density. 15,16 To date, various resistive switching-based synaptic devices built using different materials and bilayer structures have been studied. 12 Typically, the memory strength (long-term and short-term memory) is decided according to the synaptic weight difference between the pre-and post-synaptic neurons aer receiving an action potential.…”

Section: Introductionmentioning

confidence: 99%

Synaptic plasticity and learning behaviour in multilevel memristive devices

et al. 2023

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Section: Introductionmentioning

confidence: 99%

Synaptic plasticity and learning behaviour in multilevel memristive devices

et al. 2023

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“…2D-AZO, with its tunable bandgap and inherent photoresponsive/piezoelectric properties, − is an excellent semiconducting material for exploring nanoelectronic applications such as the atomic switch. − An atomic switch is an electrochemical nanodevice whose resistance switching states are controlled by atoms movement. , This switching technology has been well-established by Aono and co-workers for learning, memory, and prediction analogous to human brain. − In principle, atomically flat 2D surfaces obtainable in these films make it possible to achieve the ultimate scaling limit in the atomic switch technology − unlike other reported ZnO-based resistive switching devices. , Here, we have demonstrated an atomic switch operation on the large-area self-assembled AZO nanosheets in a mimicked Pt/AZO/Ag structure. The atomic switch operation is governed by electrochemical metallization, with nucleation as the rate-limiting step.…”

mentioning

confidence: 99%

Liquid–Liquid Interface-Assisted Self-Assembly of Ag-Doped ZnO Nanosheets for Atomic Switch Application

Pradhan,

Mahapatra,

Samal

et al. 2023

J. Phys. Chem. Lett.

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Developing facile and inexpensive methods for obtaining large-area twodimensional semiconducting nanosheets is highly desirable for mass-scale device application. Here, we report a method for producing uniform and large-area films of a Ag-doped ZnO (AZO) nanosheet network via self-assembly at the hexane−water interface by controlling the solute/solvent ratio. The self-assembled film comprises of uniformly tiled nanosheets with size ∼1 μm and thicknesses∼60−100 nm. Using these films in a Pt/AZO/Ag structure, an atomic switch operation is realized. The switching mechanism is found to be governed by electrochemical metallization with nucleation as the rate-limiting step. Our results establish the protocol for large-scale device applications of AZO nanosheets for exploring advanced atomic switch-based neuromorphic systems.

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Influence of rapid thermal annealing in vacuum on the resistive switching of Cu/ZnO/ITO devices

Liu,

Wu,

Lee

et al. 2024

AIP Advances

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In this paper, we investigate the resistive switching (RS) behavior of Cu/ZnO/ITO devices subjected to various rapid thermal annealing (RTA) temperatures under vacuum. Current–voltage characteristics reveal that following the application of a positive electroforming voltage, both unannealed ZnO films and those annealed at 200 °C exhibit bipolar RS, consistent with the electrochemical metallization mechanism (ECM). However, films annealed at higher temperatures exhibit RS with both positive and negative electroforming threshold voltages and coexistence of switching in both polarities. Ultimately, these films display RS behavior aligned with the valence change mechanism (VCM), dominated by a negative electroforming voltage and RS on the negative bias side, while positive electroforming voltage and RS vanish for films annealed at 600 °C. Curve fitting analysis was conducted for Schottky emission (SE), space-charge limited current, and Poole–Frenkel (PF) emission mechanisms, with SE and PF emission providing better fits. These results demonstrate the tunability of ECM and VCM RS modes and the polarity of the forming bias, underscoring the potential of vacuum RTA in advancing ZnO-based memory device development.

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Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor

Abstract: Synaptic simulation and nonvolatile resistive switching properties were achieved in one device.

Cited by 3 publications

References 27 publications

Synaptic plasticity and learning behaviour in multilevel memristive devices

Synaptic plasticity and learning behaviour in multilevel memristive devices

Liquid–Liquid Interface-Assisted Self-Assembly of Ag-Doped ZnO Nanosheets for Atomic Switch Application

Influence of rapid thermal annealing in vacuum on the resistive switching of Cu/ZnO/ITO devices

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