Transition Metal and Rare Earth Element Doped Zinc Oxide Nanowires for Optoelectronics

Abstract

Even though intrinsic semiconductor nanowires have already extraordinary optical properties, doping with optically active impurities significantly expands the potpourri of optoelectronic applications, such as for nanowire lasers or single photon emitters. This feature article therefore supplies a snapshot of the most recent progress on the structural and optical properties of transition metal and rare earth element doped zinc oxide (ZnO) nanowires using ion beam doping. Here, ion implantation is advantageous, as concurrent defect generation and diffusion upon subsequent annealing allows the formation of defect complexes. This scenario is in many cases even inevitable for the optical activation of the intra‐shell luminescence of the implanted impurities, as density functional theory calculations demonstrate. Finally, this article also provides the optimum preparation conditions for intense optical activity and a review on the specific luminescence properties of various optical centers in ZnO nanowires.

Doped Zinc Oxide Nanoparticles: Synthesis, Characterization and Potential Use in Nanomedicine

“…For TMs, as the influence of the surroundings is stronger due to the weaker shielding of the 3d-shell by the 3s orbit, the spin-orbit coupling is weaker and the 3d-levels are broad. As a result, the energetic spacing varies with the host material and the electron-phonon interaction appears stronger than RE elements [ 240 ]. For RE elements, because of the strong shielding of the 4f-shell by the 5s2 and 5p6 orbits, the interaction with the surroundings is weak and almost all RE elements show intra-shell luminescence, i.e., the one least occupied, and unoccupied intra-shell levels are located in the band-gap of ZnO [ 240 , 241 ].…”

“…As a result, the energetic spacing varies with the host material and the electron-phonon interaction appears stronger than RE elements [ 240 ]. For RE elements, because of the strong shielding of the 4f-shell by the 5s2 and 5p6 orbits, the interaction with the surroundings is weak and almost all RE elements show intra-shell luminescence, i.e., the one least occupied, and unoccupied intra-shell levels are located in the band-gap of ZnO [ 240 , 241 ]. Thus, a very similar chemical behavior for all lanthanides in ZnO has been identified, whereas filling the d-shell in transition metals has a stronger influence on the outer shells and its bonding behavior in the ZnO lattice.…”

Metal Ti quantum chain-inlaid 2D NaSn2(PO4)3/H-doped hard carbon hybrid electrodes with ultrahigh energy storage density

“…Hierarchically porous materials with macropores and mesopores exhibit porosity on two distinct length scales, and therefore combine the benefits of the different pore sizes, which is highly desirable in energy storage [1][2][3]. The ideal nanostructure materials for future hybrid energy storage devices should be able to transport both electrons and ions efficiently and offer high energy and power densities [4][5][6][7][8][9][10][11][12][13][14][15]. Rechargeable lithium ion batteries (LIBs) with relatively high energy density as well as long-cycle stability become one of the most promising energy storage systems for electric vehicles and portable electronic devices [16].…”

Nickel-Doped ZnO Nanowalls with Enhanced Electron Transport Ability for Electrochemical Water Splitting

“…The continuous development in the growth of nanostructured metal oxides is a key issue for optoelectronic applications in sensors [ 1 ], transistors [ 2 ], and others [ 3 , 4 ]. A deeper understanding of growth mechanism of metal oxide nanostructures with high quality and low cost is extremely important for future production.…”